High barrier Ag, Al, Au, Pt/InGaAs Schottky diodes

H. T. Wang; L. B. Chang; S. T. Chou; Y. C. Cheng

High barrier Ag, Al, Au, Pt/InGaAs Schottky diodes

H. T. Wang^*, L. B. Chang, S. T. Chou, Y. C. Cheng

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to conference › Conference Paper › peer-review

2 Scopus citations

Abstract

In_.53Ga_.47As epilayers were grown on InP substrates by the method of liquid phase epitaxy (LPE) with the addition of Pr₂O₃ into grown melts. The very low background impurity are obtained (approximately 10¹⁵ cm^-3). Their correspondent mobility also significantly increases from 15321 to 32171 cm²/V-s at 77 K. The low background concentration and high mobility is credited to the gettering effect from the addition of Pr in the growth melt. Furthermore, the In_.53Ga_.47As Schottky diodes with a barrier height of approximately 0.7 eV is constantly observed, regardless of the utilization of different metals as the Schottky contacts. The high Schottky barrier is attributed to the decrease of the surface states on the surface of the epilayer. The high Schottky barrier is very stable even at high measuring temperature and was repeatedly obtained after four months of exposure to the environment.

Original language	English
Pages	303-308
Number of pages	6
State	Published - 1997
Event	Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 1 (of 2) - Nis, Yugosl Duration: 14 09 1997 → 17 09 1997

Conference

Conference	Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 1 (of 2)
City	Nis, Yugosl
Period	14/09/97 → 17/09/97

Cite this

@conference{4a46d74f1ee3403e97e86ab43371c0f7,

title = "High barrier Ag, Al, Au, Pt/InGaAs Schottky diodes",

abstract = "In.53Ga.47As epilayers were grown on InP substrates by the method of liquid phase epitaxy (LPE) with the addition of Pr2O3 into grown melts. The very low background impurity are obtained (approximately 1015 cm-3). Their correspondent mobility also significantly increases from 15321 to 32171 cm2/V-s at 77 K. The low background concentration and high mobility is credited to the gettering effect from the addition of Pr in the growth melt. Furthermore, the In.53Ga.47As Schottky diodes with a barrier height of approximately 0.7 eV is constantly observed, regardless of the utilization of different metals as the Schottky contacts. The high Schottky barrier is attributed to the decrease of the surface states on the surface of the epilayer. The high Schottky barrier is very stable even at high measuring temperature and was repeatedly obtained after four months of exposure to the environment.",

author = "Wang, {H. T.} and Chang, {L. B.} and Chou, {S. T.} and Cheng, {Y. C.}",

year = "1997",

language = "英语",

pages = "303--308",

note = "Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 1 (of 2) ; Conference date: 14-09-1997 Through 17-09-1997",

}

TY - CONF

T1 - High barrier Ag, Al, Au, Pt/InGaAs Schottky diodes

AU - Wang, H. T.

AU - Chang, L. B.

AU - Chou, S. T.

AU - Cheng, Y. C.

PY - 1997

Y1 - 1997

N2 - In.53Ga.47As epilayers were grown on InP substrates by the method of liquid phase epitaxy (LPE) with the addition of Pr2O3 into grown melts. The very low background impurity are obtained (approximately 1015 cm-3). Their correspondent mobility also significantly increases from 15321 to 32171 cm2/V-s at 77 K. The low background concentration and high mobility is credited to the gettering effect from the addition of Pr in the growth melt. Furthermore, the In.53Ga.47As Schottky diodes with a barrier height of approximately 0.7 eV is constantly observed, regardless of the utilization of different metals as the Schottky contacts. The high Schottky barrier is attributed to the decrease of the surface states on the surface of the epilayer. The high Schottky barrier is very stable even at high measuring temperature and was repeatedly obtained after four months of exposure to the environment.

AB - In.53Ga.47As epilayers were grown on InP substrates by the method of liquid phase epitaxy (LPE) with the addition of Pr2O3 into grown melts. The very low background impurity are obtained (approximately 1015 cm-3). Their correspondent mobility also significantly increases from 15321 to 32171 cm2/V-s at 77 K. The low background concentration and high mobility is credited to the gettering effect from the addition of Pr in the growth melt. Furthermore, the In.53Ga.47As Schottky diodes with a barrier height of approximately 0.7 eV is constantly observed, regardless of the utilization of different metals as the Schottky contacts. The high Schottky barrier is attributed to the decrease of the surface states on the surface of the epilayer. The high Schottky barrier is very stable even at high measuring temperature and was repeatedly obtained after four months of exposure to the environment.

UR - http://www.scopus.com/inward/record.url?scp=0031363521&partnerID=8YFLogxK

M3 - 论文

AN - SCOPUS:0031363521

SP - 303

EP - 308

T2 - Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 1 (of 2)

Y2 - 14 September 1997 through 17 September 1997

ER -

High barrier Ag, Al, Au, Pt/InGaAs Schottky diodes

Abstract

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