High barrier height nickel/GaAs schottky diodes fabricated by addition of Pr2O3 into a Ga melt for liquid phase epitaxy

Liann Be Chang*, Hung Thung Wang, Li Chang Yang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Abstract

A high Schottky barrier and low leakage current Ni/GaAs diode was fabricated by addition of an appropriate amount of Pr2O3 into a Ga melt for liquid phase epitaxy (LPE), which was brought about by removel of oxygen and sulfer impurities and induction of a slight increase in the concentration of carbon impurities at the grown surfaces. These effects not only enhanced the Schttky barrier height but also reduced the leakage current. Excellent properties of a Schottky barrier as high as 0.94±0.01 eV and an ideality factor as low as 1.02±0.01 were obtained.

Original languageEnglish
Pages (from-to)3429-3432
Number of pages4
JournalJapanese Journal of Applied Physics
Volume36
Issue number6 A
DOIs
StatePublished - 06 1997
Externally publishedYes

Keywords

  • Barrier height
  • Ideality factor
  • Leakage cuurent
  • Schottky diode

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