High barrier height nickel/GaAs schottky diodes fabricated by addition of Pr2O3 into a Ga melt for liquid phase epitaxy

Liann Be Chang; Hung Thung Wang; Li Chang Yang

doi:10.1143/jjap.36.3429

High barrier height nickel/GaAs schottky diodes fabricated by addition of Pr₂O₃ into a Ga melt for liquid phase epitaxy

Liann Be Chang^*
, Hung Thung Wang
, Li Chang Yang

^*Corresponding author for this work

National Defense University Taiwan

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

A high Schottky barrier and low leakage current Ni/GaAs diode was fabricated by addition of an appropriate amount of Pr₂O₃ into a Ga melt for liquid phase epitaxy (LPE), which was brought about by removel of oxygen and sulfer impurities and induction of a slight increase in the concentration of carbon impurities at the grown surfaces. These effects not only enhanced the Schttky barrier height but also reduced the leakage current. Excellent properties of a Schottky barrier as high as 0.94±0.01 eV and an ideality factor as low as 1.02±0.01 were obtained.

Original language	English
Pages (from-to)	3429-3432
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	36
Issue number	6 A
DOIs	https://doi.org/10.1143/jjap.36.3429
State	Published - 06 1997
Externally published	Yes

Keywords

Barrier height
Ideality factor
Leakage cuurent
Schottky diode

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10.1143/jjap.36.3429

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title = "High barrier height nickel/GaAs schottky diodes fabricated by addition of Pr2O3 into a Ga melt for liquid phase epitaxy",

abstract = "A high Schottky barrier and low leakage current Ni/GaAs diode was fabricated by addition of an appropriate amount of Pr2O3 into a Ga melt for liquid phase epitaxy (LPE), which was brought about by removel of oxygen and sulfer impurities and induction of a slight increase in the concentration of carbon impurities at the grown surfaces. These effects not only enhanced the Schttky barrier height but also reduced the leakage current. Excellent properties of a Schottky barrier as high as 0.94±0.01 eV and an ideality factor as low as 1.02±0.01 were obtained.",

keywords = "Barrier height, Ideality factor, Leakage cuurent, Schottky diode",

author = "Chang, \{Liann Be\} and Wang, \{Hung Thung\} and Yang, \{Li Chang\}",

year = "1997",

month = jun,

doi = "10.1143/jjap.36.3429",

language = "英语",

volume = "36",

pages = "3429--3432",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

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TY - JOUR

T1 - High barrier height nickel/GaAs schottky diodes fabricated by addition of Pr2O3 into a Ga melt for liquid phase epitaxy

AU - Chang, Liann Be

AU - Wang, Hung Thung

AU - Yang, Li Chang

PY - 1997/6

Y1 - 1997/6

N2 - A high Schottky barrier and low leakage current Ni/GaAs diode was fabricated by addition of an appropriate amount of Pr2O3 into a Ga melt for liquid phase epitaxy (LPE), which was brought about by removel of oxygen and sulfer impurities and induction of a slight increase in the concentration of carbon impurities at the grown surfaces. These effects not only enhanced the Schttky barrier height but also reduced the leakage current. Excellent properties of a Schottky barrier as high as 0.94±0.01 eV and an ideality factor as low as 1.02±0.01 were obtained.

AB - A high Schottky barrier and low leakage current Ni/GaAs diode was fabricated by addition of an appropriate amount of Pr2O3 into a Ga melt for liquid phase epitaxy (LPE), which was brought about by removel of oxygen and sulfer impurities and induction of a slight increase in the concentration of carbon impurities at the grown surfaces. These effects not only enhanced the Schttky barrier height but also reduced the leakage current. Excellent properties of a Schottky barrier as high as 0.94±0.01 eV and an ideality factor as low as 1.02±0.01 were obtained.

KW - Barrier height

KW - Ideality factor

KW - Leakage cuurent

KW - Schottky diode

UR - https://www.scopus.com/pages/publications/0031166492

U2 - 10.1143/jjap.36.3429

DO - 10.1143/jjap.36.3429

M3 - 文章

AN - SCOPUS:0031166492

SN - 0021-4922

VL - 36

SP - 3429

EP - 3432

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 A

ER -

High barrier height nickel/GaAs schottky diodes fabricated by addition of Pr₂O₃ into a Ga melt for liquid phase epitaxy

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Keywords

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