High barrier height nickel/GaAs schottky diodes fabricated by addition of Pr2O3 into a Ga melt for liquid phase epitaxy

Liann Be Chang*, Hung Thung Wang, Li Chang Yang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Fingerprint

Dive into the research topics of 'High barrier height nickel/GaAs schottky diodes fabricated by addition of Pr2O3 into a Ga melt for liquid phase epitaxy'. Together they form a unique fingerprint.

Material Science

Physics