Abstract
This work develops a thermally stable micromachined AlGaN/GaN high-electron mobility transistor (HEMT) with an enhanced breakdown voltage. After removal of the Si substrate beneath the HEMT, a 300-nm SiO2 and a 20- μm copper layer are deposited to form the GaN-on-insulator (G.O.I.) structure. The self-heating at high current that is exhibited by GaN HEMTs that are by previously developed full substrate removal methods is eliminated. The need for complicated substrate-transfer technology is also eliminated, increasing chip package yield. The low frequency noise measurement results also demonstrate that the trap density of the buffer/transition layer is reduced by the removal of the substrate and micromachining of the HEMTs.
Original language | English |
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Article number | 6787014 |
Pages (from-to) | 726-731 |
Number of pages | 6 |
Journal | IEEE Transactions on Device and Materials Reliability |
Volume | 14 |
Issue number | 2 |
DOIs | |
State | Published - 06 2014 |
Keywords
- AlGaN/GaN HEMT
- Micromachined technology
- breakdown voltage
- buffer layer traps
- low frequency noise