High breakdown voltage enhancement-mode Mg xZn 1-xO thin-film transistor using CF 4 plasma treatment

Hsien Chin Chiu; Hsiang Chun Wang; Che Kai Lin; Hsuan Ling Kao; Jeffrey S. Fu; Kuang Po Hsueh

doi:10.1149/2.004202esl

High breakdown voltage enhancement-mode Mg _xZn _1-xO thin-film transistor using CF ₄ plasma treatment

Hsien Chin Chiu^*, Hsiang Chun Wang, Che Kai Lin, Hsuan Ling Kao, Jeffrey S. Fu, Kuang Po Hsueh

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

In this study, a high breakdown voltage (V _BR) enhancement-mode (E-mode) Mg _xZn _1-xO channel thin-film transistor (TFT) was realized using a gadolinium oxide (Gd ₂O ₃) gate insulator and CF ₄ plasma treatment technologies. The threshold voltage (V _T) for conventional Gd ₂O ₃Mg _xZn _1-xO TFTs was -2.8 V and this value was adjusted to 0.1V after nine minutes of CF ₄ plasma treatment beneath the gate regime. X-ray photoelectron spectroscopy (XPS) results indicated that the fluorine atoms reduced the number of oxygen vacancies in Mg _xZn _1-xO channel, resulting in an extreme low carrier concentration beneath the gate region. Additionally, this E-mode TFT had favorable surface roughness and low interface state density.

Original language	English
Pages (from-to)	H20-H22
Journal	Electrochemical and Solid-State Letters
Volume	15
Issue number	2
DOIs	https://doi.org/10.1149/2.004202esl
State	Published - 2012

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title = "High breakdown voltage enhancement-mode Mg xZn 1-xO thin-film transistor using CF 4 plasma treatment",

abstract = "In this study, a high breakdown voltage (V BR) enhancement-mode (E-mode) Mg xZn 1-xO channel thin-film transistor (TFT) was realized using a gadolinium oxide (Gd 2O 3) gate insulator and CF 4 plasma treatment technologies. The threshold voltage (V T) for conventional Gd 2O 3Mg xZn 1-xO TFTs was -2.8 V and this value was adjusted to 0.1V after nine minutes of CF 4 plasma treatment beneath the gate regime. X-ray photoelectron spectroscopy (XPS) results indicated that the fluorine atoms reduced the number of oxygen vacancies in Mg xZn 1-xO channel, resulting in an extreme low carrier concentration beneath the gate region. Additionally, this E-mode TFT had favorable surface roughness and low interface state density.",

author = "Chiu, \{Hsien Chin\} and Wang, \{Hsiang Chun\} and Lin, \{Che Kai\} and Kao, \{Hsuan Ling\} and Fu, \{Jeffrey S.\} and Hsueh, \{Kuang Po\}",

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doi = "10.1149/2.004202esl",

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volume = "15",

pages = "H20--H22",

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T1 - High breakdown voltage enhancement-mode Mg xZn 1-xO thin-film transistor using CF 4 plasma treatment

AU - Chiu, Hsien Chin

AU - Wang, Hsiang Chun

AU - Lin, Che Kai

AU - Kao, Hsuan Ling

AU - Fu, Jeffrey S.

AU - Hsueh, Kuang Po

PY - 2012

Y1 - 2012

N2 - In this study, a high breakdown voltage (V BR) enhancement-mode (E-mode) Mg xZn 1-xO channel thin-film transistor (TFT) was realized using a gadolinium oxide (Gd 2O 3) gate insulator and CF 4 plasma treatment technologies. The threshold voltage (V T) for conventional Gd 2O 3Mg xZn 1-xO TFTs was -2.8 V and this value was adjusted to 0.1V after nine minutes of CF 4 plasma treatment beneath the gate regime. X-ray photoelectron spectroscopy (XPS) results indicated that the fluorine atoms reduced the number of oxygen vacancies in Mg xZn 1-xO channel, resulting in an extreme low carrier concentration beneath the gate region. Additionally, this E-mode TFT had favorable surface roughness and low interface state density.

AB - In this study, a high breakdown voltage (V BR) enhancement-mode (E-mode) Mg xZn 1-xO channel thin-film transistor (TFT) was realized using a gadolinium oxide (Gd 2O 3) gate insulator and CF 4 plasma treatment technologies. The threshold voltage (V T) for conventional Gd 2O 3Mg xZn 1-xO TFTs was -2.8 V and this value was adjusted to 0.1V after nine minutes of CF 4 plasma treatment beneath the gate regime. X-ray photoelectron spectroscopy (XPS) results indicated that the fluorine atoms reduced the number of oxygen vacancies in Mg xZn 1-xO channel, resulting in an extreme low carrier concentration beneath the gate region. Additionally, this E-mode TFT had favorable surface roughness and low interface state density.

UR - https://www.scopus.com/pages/publications/84055218176

U2 - 10.1149/2.004202esl

DO - 10.1149/2.004202esl

M3 - 文章

AN - SCOPUS:84055218176

SN - 1099-0062

VL - 15

SP - H20-H22

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

High breakdown voltage enhancement-mode Mg _xZn _1-xO thin-film transistor using CF ₄ plasma treatment

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