High brightness and long lifetime OLED with mixing layer technology

Jiun Haw Lee; S. W. Liu; Ching An Huang; K. H. Yang; Yih Chang

doi:10.1117/12.549052

High brightness and long lifetime OLED with mixing layer technology

Jiun Haw Lee^*, S. W. Liu, Ching An Huang, K. H. Yang, Yih Chang

^*Corresponding author for this work

Department of Mechanical Engineering

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

In this paper, we demonstrate organic light emitting devices (OLED) that exhibit high brightness, low driving voltage and long lifetime. Devices with the brightness of 10,000 cd/m² can be achieved at 4 V by the use of the high mobility electron-transport layer (ETL) material, bis(10-hydroxybenzo[h]qinolinato)beryllium (Bebq₂), and the mixing host (MH) technology. Electron mobility of Bebq2 is two orders of magnitude higher than that of the typical ETL material, tris-(8-hydroxyquinoline) aluminum (Alq3), from the time-of-flight (TOF) measurement and hence the driving voltage can be decreased. By co-evaporating the hole-transport layer (HTL) material and the ETL material as the host of the emitting layer, it reduces two volts in driving voltage because of its bipolar transport characteristics. MH technology can not only decrease the driving voltage, but also increase the device lifetime since it eliminates the sharp boundary of HTL/ETL interface and decreases the carriers piling up near this interface which causes the organic material degradation. Compared to the conventional heterojunction (HJ) OLED, operation lifetime of MH devices was enhanced by a factor of 4.

Original language	English
Pages (from-to)	434-440
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5464
DOIs	https://doi.org/10.1117/12.549052
State	Published - 2004
Event	Organic Optoelectronics and Photonics - Strasbourg, France Duration: 28 04 2004 → 30 04 2004

Keywords

Lifetime
Mixing layer
OLED

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10.1117/12.549052

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title = "High brightness and long lifetime OLED with mixing layer technology",

abstract = "In this paper, we demonstrate organic light emitting devices (OLED) that exhibit high brightness, low driving voltage and long lifetime. Devices with the brightness of 10,000 cd/m2 can be achieved at 4 V by the use of the high mobility electron-transport layer (ETL) material, bis(10-hydroxybenzo[h]qinolinato)beryllium (Bebq2), and the mixing host (MH) technology. Electron mobility of Bebq2 is two orders of magnitude higher than that of the typical ETL material, tris-(8-hydroxyquinoline) aluminum (Alq3), from the time-of-flight (TOF) measurement and hence the driving voltage can be decreased. By co-evaporating the hole-transport layer (HTL) material and the ETL material as the host of the emitting layer, it reduces two volts in driving voltage because of its bipolar transport characteristics. MH technology can not only decrease the driving voltage, but also increase the device lifetime since it eliminates the sharp boundary of HTL/ETL interface and decreases the carriers piling up near this interface which causes the organic material degradation. Compared to the conventional heterojunction (HJ) OLED, operation lifetime of MH devices was enhanced by a factor of 4.",

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author = "Lee, {Jiun Haw} and Liu, {S. W.} and Huang, {Ching An} and Yang, {K. H.} and Yih Chang",

year = "2004",

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pages = "434--440",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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AU - Lee, Jiun Haw

AU - Liu, S. W.

AU - Huang, Ching An

AU - Yang, K. H.

AU - Chang, Yih

PY - 2004

Y1 - 2004

N2 - In this paper, we demonstrate organic light emitting devices (OLED) that exhibit high brightness, low driving voltage and long lifetime. Devices with the brightness of 10,000 cd/m2 can be achieved at 4 V by the use of the high mobility electron-transport layer (ETL) material, bis(10-hydroxybenzo[h]qinolinato)beryllium (Bebq2), and the mixing host (MH) technology. Electron mobility of Bebq2 is two orders of magnitude higher than that of the typical ETL material, tris-(8-hydroxyquinoline) aluminum (Alq3), from the time-of-flight (TOF) measurement and hence the driving voltage can be decreased. By co-evaporating the hole-transport layer (HTL) material and the ETL material as the host of the emitting layer, it reduces two volts in driving voltage because of its bipolar transport characteristics. MH technology can not only decrease the driving voltage, but also increase the device lifetime since it eliminates the sharp boundary of HTL/ETL interface and decreases the carriers piling up near this interface which causes the organic material degradation. Compared to the conventional heterojunction (HJ) OLED, operation lifetime of MH devices was enhanced by a factor of 4.

AB - In this paper, we demonstrate organic light emitting devices (OLED) that exhibit high brightness, low driving voltage and long lifetime. Devices with the brightness of 10,000 cd/m2 can be achieved at 4 V by the use of the high mobility electron-transport layer (ETL) material, bis(10-hydroxybenzo[h]qinolinato)beryllium (Bebq2), and the mixing host (MH) technology. Electron mobility of Bebq2 is two orders of magnitude higher than that of the typical ETL material, tris-(8-hydroxyquinoline) aluminum (Alq3), from the time-of-flight (TOF) measurement and hence the driving voltage can be decreased. By co-evaporating the hole-transport layer (HTL) material and the ETL material as the host of the emitting layer, it reduces two volts in driving voltage because of its bipolar transport characteristics. MH technology can not only decrease the driving voltage, but also increase the device lifetime since it eliminates the sharp boundary of HTL/ETL interface and decreases the carriers piling up near this interface which causes the organic material degradation. Compared to the conventional heterojunction (HJ) OLED, operation lifetime of MH devices was enhanced by a factor of 4.

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KW - Mixing layer

KW - OLED

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Y2 - 28 April 2004 through 30 April 2004

ER -

High brightness and long lifetime OLED with mixing layer technology

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