High efficiency envelope tracking LDMOS power amplifier for W-CDMA

P. Draxler*, S. Lanfranco, D. Kimball, C. Hsia, J. Jeong, J. Van De Sluis, P. M. Asbeck

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

58 Scopus citations

Abstract

A high performance W-CDMA base station power amplifier is presented, which uses an envelope tracking bias system along with an advanced 0.4um gate length LDMOS transistor, to achieve high efficiency. High linearity is also achieved by employing digital predistortion. For a target WCDMA envelope with a peak-to-average power ratio of 7.6 dB, the measured overall power-added efficiency (PAE) is as high as 40.4 %. Within this system, the RF power amplifier has an average Drain Efficiency of approximately 64%, and the envelope amplifier has about 60% efficiency. After the memoryless digital predistortion the normalized power RMS error is 3.3%, at an average output power of 27 W and gain of 14.9 dB. After memory mitigation the normalized power RMS error drops to below 1.0%. The efficiency ranks among the highest reported for a single stage LDMOS W-CDMA base station amplifier.

Original languageEnglish
Article number4015227
Pages (from-to)1534-1537
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
DOIs
StatePublished - 2006
Externally publishedYes
Event2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States
Duration: 11 06 200616 06 2006

Keywords

  • Base station power amplifier
  • Digital predistortion
  • Efficiency
  • Envelope tracking
  • LDMOS
  • W-CDMA

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