High-frequency performance of metamorphic InP/In0.53Ga0.47As/InP DHBT in common base configuration on GaAs substrates

Yong Zhong Xiong; Jeffrey S. Fu; Hong Wang; Geok Ing Ng; K. Radhakrishnan

doi:10.1016/S1369-8001(02)00035-5

High-frequency performance of metamorphic InP/In_0.53Ga_0.47As/InP DHBT in common base configuration on GaAs substrates

Yong Zhong Xiong^*
, Jeffrey S. Fu
, Hong Wang
, Geok Ing Ng
, K. Radhakrishnan

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

Abstract

In this work, we report the detailed high-frequency noise and power characterization of metamorphic InP double heterojunction bipolar transistors in common base configuration. The noise and power performances were investigated for 5 × 10 μm² device. A minimum noise figure of 2.3 dB with an associated gain of 14.5 dB at 2 GHz, and a maximum output power of 13.0 dBm with a power added efficiency of 47.8% at 2.4 GHz were obtained.

Original language	English
Pages (from-to)	647-649
Number of pages	3
Journal	Materials Science in Semiconductor Processing
Volume	4
Issue number	6
DOIs	https://doi.org/10.1016/S1369-8001(02)00035-5
State	Published - 12 2001
Externally published	Yes

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10.1016/S1369-8001(02)00035-5

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title = "High-frequency performance of metamorphic InP/In0.53Ga0.47As/InP DHBT in common base configuration on GaAs substrates",

abstract = "In this work, we report the detailed high-frequency noise and power characterization of metamorphic InP double heterojunction bipolar transistors in common base configuration. The noise and power performances were investigated for 5 × 10 μm2 device. A minimum noise figure of 2.3 dB with an associated gain of 14.5 dB at 2 GHz, and a maximum output power of 13.0 dBm with a power added efficiency of 47.8\% at 2.4 GHz were obtained.",

author = "Xiong, \{Yong Zhong\} and Fu, \{Jeffrey S.\} and Hong Wang and Ng, \{Geok Ing\} and K. Radhakrishnan",

year = "2001",

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doi = "10.1016/S1369-8001(02)00035-5",

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AU - Xiong, Yong Zhong

AU - Fu, Jeffrey S.

AU - Wang, Hong

AU - Ng, Geok Ing

AU - Radhakrishnan, K.

PY - 2001/12

Y1 - 2001/12

N2 - In this work, we report the detailed high-frequency noise and power characterization of metamorphic InP double heterojunction bipolar transistors in common base configuration. The noise and power performances were investigated for 5 × 10 μm2 device. A minimum noise figure of 2.3 dB with an associated gain of 14.5 dB at 2 GHz, and a maximum output power of 13.0 dBm with a power added efficiency of 47.8% at 2.4 GHz were obtained.

AB - In this work, we report the detailed high-frequency noise and power characterization of metamorphic InP double heterojunction bipolar transistors in common base configuration. The noise and power performances were investigated for 5 × 10 μm2 device. A minimum noise figure of 2.3 dB with an associated gain of 14.5 dB at 2 GHz, and a maximum output power of 13.0 dBm with a power added efficiency of 47.8% at 2.4 GHz were obtained.

UR - https://www.scopus.com/pages/publications/0035574862

U2 - 10.1016/S1369-8001(02)00035-5

DO - 10.1016/S1369-8001(02)00035-5

M3 - 文章

AN - SCOPUS:0035574862

SN - 1369-8001

VL - 4

SP - 647

EP - 649

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 6

ER -

High-frequency performance of metamorphic InP/In_0.53Ga_0.47As/InP DHBT in common base configuration on GaAs substrates

Abstract

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