High-gate-voltage-swing region of normally-off p-GaN MIS-HEMT with ALDGrown Al2O3/AlN gate insulator layer

Chi Chuan Chiu; Chia Hao Liu; Hsien Chin Chiu; Liann Be Chang

High-gate-voltage-swing region of normally-off p-GaN MIS-HEMT with ALDGrown Al₂O₃/AlN gate insulator layer

Chi Chuan Chiu^*, Chia Hao Liu, Hsien Chin Chiu, Liann Be Chang

^*Corresponding author for this work

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Metal-insulator-semiconductor p-type GaN highelectron- mobility transistor with an Al₂O₃/AlN deposited by atomic layer deposition was investigated. The selected insulator, AlN has been proven to have a good interface with GaN. A traditional p-GaN device without an Al₂O₃/AlN layer was processed for comparison. Due to the Al₂O₃/AlN layer, the gate leakage was lower, and the threshold voltage was higher, at 4.7 V. Additionally, excellent turn-on voltage was obtained. Furthermore, low current degradation and smaller VTH shift at high temperatures was also observed. Hence, growing a goodquality Al₂O₃/AlN layer can achieve an enhancementmode operation with superior stability and high gate swing region.

Original language	English
Title of host publication	CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers
Publisher	CS Mantech
Pages	245-248
Number of pages	4
ISBN (Electronic)	9781893580305
State	Published - 2020
Event	2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020 - Tuczon, United States Duration: 11 05 2020 → 14 05 2020

Publication series

Name	CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

Conference

Conference	2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020
Country/Territory	United States
City	Tuczon
Period	11/05/20 → 14/05/20

Bibliographical note

Publisher Copyright:
© CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers.

Keywords

MIS
NORMALLY-OFF
P-GAN GATE HEMT

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Chiu, C. C., Liu, C. H., Chiu, H. C., & Chang, L. B. (2020). High-gate-voltage-swing region of normally-off p-GaN MIS-HEMT with ALDGrown Al₂O₃/AlN gate insulator layer. In CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers (pp. 245-248). (CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers). CS Mantech.

Chiu, Chi Chuan ; Liu, Chia Hao ; Chiu, Hsien Chin et al. / High-gate-voltage-swing region of normally-off p-GaN MIS-HEMT with ALDGrown Al₂O₃/AlN gate insulator layer. CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2020. pp. 245-248 (CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

@inproceedings{fb9692b506d943e981d3778c82631fd6,

title = "High-gate-voltage-swing region of normally-off p-GaN MIS-HEMT with ALDGrown Al2O3/AlN gate insulator layer",

abstract = "Metal-insulator-semiconductor p-type GaN highelectron- mobility transistor with an Al2O3/AlN deposited by atomic layer deposition was investigated. The selected insulator, AlN has been proven to have a good interface with GaN. A traditional p-GaN device without an Al2O3/AlN layer was processed for comparison. Due to the Al2O3/AlN layer, the gate leakage was lower, and the threshold voltage was higher, at 4.7 V. Additionally, excellent turn-on voltage was obtained. Furthermore, low current degradation and smaller VTH shift at high temperatures was also observed. Hence, growing a goodquality Al2O3/AlN layer can achieve an enhancementmode operation with superior stability and high gate swing region.",

keywords = "MIS, NORMALLY-OFF, P-GAN GATE HEMT",

author = "Chiu, \{Chi Chuan\} and Liu, \{Chia Hao\} and Chiu, \{Hsien Chin\} and Chang, \{Liann Be\}",

note = "Publisher Copyright: {\textcopyright} CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers.; 2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020 ; Conference date: 11-05-2020 Through 14-05-2020",

year = "2020",

language = "英语",

series = "CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

publisher = "CS Mantech",

pages = "245--248",

booktitle = "CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

}

Chiu, CC, Liu, CH, Chiu, HC & Chang, LB 2020, High-gate-voltage-swing region of normally-off p-GaN MIS-HEMT with ALDGrown Al₂O₃/AlN gate insulator layer. in CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, CS Mantech, pp. 245-248, 2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020, Tuczon, United States, 11/05/20.

High-gate-voltage-swing region of normally-off p-GaN MIS-HEMT with ALDGrown Al₂O₃/AlN gate insulator layer. / Chiu, Chi Chuan; Liu, Chia Hao; Chiu, Hsien Chin et al.
CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2020. p. 245-248 (CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-gate-voltage-swing region of normally-off p-GaN MIS-HEMT with ALDGrown Al2O3/AlN gate insulator layer

AU - Chiu, Chi Chuan

AU - Liu, Chia Hao

AU - Chiu, Hsien Chin

AU - Chang, Liann Be

PY - 2020

Y1 - 2020

N2 - Metal-insulator-semiconductor p-type GaN highelectron- mobility transistor with an Al2O3/AlN deposited by atomic layer deposition was investigated. The selected insulator, AlN has been proven to have a good interface with GaN. A traditional p-GaN device without an Al2O3/AlN layer was processed for comparison. Due to the Al2O3/AlN layer, the gate leakage was lower, and the threshold voltage was higher, at 4.7 V. Additionally, excellent turn-on voltage was obtained. Furthermore, low current degradation and smaller VTH shift at high temperatures was also observed. Hence, growing a goodquality Al2O3/AlN layer can achieve an enhancementmode operation with superior stability and high gate swing region.

AB - Metal-insulator-semiconductor p-type GaN highelectron- mobility transistor with an Al2O3/AlN deposited by atomic layer deposition was investigated. The selected insulator, AlN has been proven to have a good interface with GaN. A traditional p-GaN device without an Al2O3/AlN layer was processed for comparison. Due to the Al2O3/AlN layer, the gate leakage was lower, and the threshold voltage was higher, at 4.7 V. Additionally, excellent turn-on voltage was obtained. Furthermore, low current degradation and smaller VTH shift at high temperatures was also observed. Hence, growing a goodquality Al2O3/AlN layer can achieve an enhancementmode operation with superior stability and high gate swing region.

KW - MIS

KW - NORMALLY-OFF

KW - P-GAN GATE HEMT

UR - https://www.scopus.com/pages/publications/85096573754

M3 - 会议稿件

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T3 - CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

SP - 245

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BT - CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

PB - CS Mantech

T2 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020

Y2 - 11 May 2020 through 14 May 2020

ER -

Chiu CC, Liu CH, Chiu HC, Chang LB. High-gate-voltage-swing region of normally-off p-GaN MIS-HEMT with ALDGrown Al₂O₃/AlN gate insulator layer. In CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech. 2020. p. 245-248. (CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).