High ge content of SiGe channel pMOSFETs on Si (110) surfaces

M. H. Lee; S. T. Chang; S. Maikap; C. Y. Peng; C. H. Lee

doi:10.1109/LED.2009.2036138

High ge content of SiGe channel pMOSFETs on Si (110) surfaces

M. H. Lee
, S. T. Chang
, S. Maikap
, C. Y. Peng
, C. H. Lee

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

16 Scopus citations

Abstract

The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. ₂Ge0. ₈(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

Original language	English
Article number	5371936
Pages (from-to)	141-143
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	2
DOIs	https://doi.org/10.1109/LED.2009.2036138
State	Published - 02 2010

Keywords

(110)
Mobility
Orientation
SiGe
Strain

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10.1109/LED.2009.2036138

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title = "High ge content of SiGe channel pMOSFETs on Si (110) surfaces",

abstract = "The characteristics of \$\textbackslash{}hbox\{Si\}-\{0.2\}\textbackslash{}hbox\{Ge\}-\{0.8\}\$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70\% and by 80\% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200\% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.",

keywords = "(110), Mobility, Orientation, SiGe, Strain",

author = "Lee, \{M. H.\} and Chang, \{S. T.\} and S. Maikap and Peng, \{C. Y.\} and Lee, \{C. H.\}",

year = "2010",

month = feb,

doi = "10.1109/LED.2009.2036138",

language = "英语",

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T1 - High ge content of SiGe channel pMOSFETs on Si (110) surfaces

AU - Lee, M. H.

AU - Chang, S. T.

AU - Maikap, S.

AU - Peng, C. Y.

AU - Lee, C. H.

PY - 2010/2

Y1 - 2010/2

N2 - The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

AB - The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

KW - (110)

KW - Mobility

KW - Orientation

KW - SiGe

KW - Strain

UR - https://www.scopus.com/pages/publications/75749084333

U2 - 10.1109/LED.2009.2036138

DO - 10.1109/LED.2009.2036138

M3 - 文章

AN - SCOPUS:75749084333

SN - 0741-3106

VL - 31

SP - 141

EP - 143

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 5371936

ER -

High ge content of SiGe channel pMOSFETs on Si (110) surfaces

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Keywords

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