High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films

Tung Ming Pan; Tan Fu Lei; Tien Sheng Chao

doi:10.1063/1.1352044

High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films

Tung Ming Pan^*
, Tan Fu Lei
, Tien Sheng Chao

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

18 Scopus citations

Abstract

High-k cobalt-titanium oxide (CoTiO₃) film was formed by directly oxidizing sputtered Co/Ti or Ti/Co films. Al/CoTiO₃/Si₃N₄/Si capacitor structures were fabricated and measured. Excellent electrical properties with an effective dielectric constant (i.e., k value) as high as 40 have been achieved for a CoTiO₃ gate dielectric with a buffer layer. The metal-oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

Original language	English
Pages (from-to)	1439-1441
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	10
DOIs	https://doi.org/10.1063/1.1352044
State	Published - 05 03 2001
Externally published	Yes

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title = "High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films",

abstract = "High-k cobalt-titanium oxide (CoTiO3) film was formed by directly oxidizing sputtered Co/Ti or Ti/Co films. Al/CoTiO3/Si3N4/Si capacitor structures were fabricated and measured. Excellent electrical properties with an effective dielectric constant (i.e., k value) as high as 40 have been achieved for a CoTiO3 gate dielectric with a buffer layer. The metal-oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.",

author = "Pan, \{Tung Ming\} and Lei, \{Tan Fu\} and Chao, \{Tien Sheng\}",

year = "2001",

month = mar,

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doi = "10.1063/1.1352044",

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journal = "Applied Physics Letters",

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AU - Pan, Tung Ming

AU - Lei, Tan Fu

AU - Chao, Tien Sheng

PY - 2001/3/5

Y1 - 2001/3/5

N2 - High-k cobalt-titanium oxide (CoTiO3) film was formed by directly oxidizing sputtered Co/Ti or Ti/Co films. Al/CoTiO3/Si3N4/Si capacitor structures were fabricated and measured. Excellent electrical properties with an effective dielectric constant (i.e., k value) as high as 40 have been achieved for a CoTiO3 gate dielectric with a buffer layer. The metal-oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

AB - High-k cobalt-titanium oxide (CoTiO3) film was formed by directly oxidizing sputtered Co/Ti or Ti/Co films. Al/CoTiO3/Si3N4/Si capacitor structures were fabricated and measured. Excellent electrical properties with an effective dielectric constant (i.e., k value) as high as 40 have been achieved for a CoTiO3 gate dielectric with a buffer layer. The metal-oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

UR - https://www.scopus.com/pages/publications/0039489965

U2 - 10.1063/1.1352044

DO - 10.1063/1.1352044

M3 - 文章

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SN - 0003-6951

VL - 78

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EP - 1441

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films

Abstract

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