High-k HfO2/TiO2/HfO2 multilayer quantum well flash memory devices

Siddheswar Maikap; P. J. Tzeng; S. S. Tseng; T. Y. Wang; C. H. Lin; H. Y. Lee; Chun-Chieh Wang; T. C. Tien; L. S. Lee; P. W. Li; J. R. Yang; M. J. Tsai

High-k HfO2/TiO2/HfO2 multilayer quantum well flash memory devices

Siddheswar Maikap, P. J. Tzeng, S. S. Tseng, T. Y. Wang, C. H. Lin, H. Y. Lee, Chun-Chieh Wang, T. C. Tien, L. S. Lee, P. W. Li, J. R. Yang, M. J. Tsai

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2007
Event	2007 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan Duration: 23 04 2007 → 25 04 2007

Conference

Conference	2007 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)
Period	23/04/07 → 25/04/07

Cite this

@conference{ca8f069d0a6d4f918589b20fbf75f077,

title = "High-k HfO2/TiO2/HfO2 multilayer quantum well flash memory devices",

author = "Siddheswar Maikap and Tzeng, {P. J.} and Tseng, {S. S.} and Wang, {T. Y.} and Lin, {C. H.} and Lee, {H. Y.} and Chun-Chieh Wang and Tien, {T. C.} and Lee, {L. S.} and Li, {P. W.} and Yang, {J. R.} and Tsai, {M. J.}",

year = "2007",

language = "American English",

note = "2007 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) ; Conference date: 23-04-2007 Through 25-04-2007",

}

TY - CONF

T1 - High-k HfO2/TiO2/HfO2 multilayer quantum well flash memory devices

AU - Maikap, Siddheswar

AU - Tzeng, P. J.

AU - Tseng, S. S.

AU - Wang, T. Y.

AU - Lin, C. H.

AU - Lee, H. Y.

AU - Wang, Chun-Chieh

AU - Tien, T. C.

AU - Lee, L. S.

AU - Li, P. W.

AU - Yang, J. R.

AU - Tsai, M. J.

PY - 2007

Y1 - 2007

M3 - Proceeding

T2 - 2007 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)

Y2 - 23 April 2007 through 25 April 2007

ER -