High-k Hf_xGd_yO_z charge trapping layer in silicon-oxide-nitride-silicon type nonvolatile memory by in situ radio frequency dual-sputtering method

In this paper, we propose a novel non-volatile memory (NVM) with a Hf _xGd_yO_z trapping layer prepared by RF dual sputtering for the first time. A higher programming/erasing (P/E) speed and a longer data retention time can be obtained owing to improved trapping ability of HfGdO. Furthermore, in situ RF dual sputtering of Hf_xGd _yO_z MHHHS (metal/HfO₂/Hf_xGd _yO_z/HfO₂/Si) is a promising technology for future NVM because of its simplicity and its material compatibility in the semiconductor industry.