High-k HfxGdyOz charge trapping layer in silicon-oxide-nitride-silicon type nonvolatile memory by in situ radio frequency dual-sputtering method

Pai Chi Chou; Chao Sung Lai; Jer Chyi Wang; Woei Cherng Wu; Li Chi Liu; Yu Ching Fang; Li Hsu; Hui Chun Wang

doi:10.1143/JJAP.48.05DF01

High-k Hf_xGd_yO_z charge trapping layer in silicon-oxide-nitride-silicon type nonvolatile memory by in situ radio frequency dual-sputtering method

Pai Chi Chou^*
, Chao Sung Lai
, Jer Chyi Wang
, Woei Cherng Wu
, Li Chi Liu
, Yu Ching Fang
, Li Hsu
, Hui Chun Wang

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

Abstract

In this paper, we propose a novel non-volatile memory (NVM) with a Hf _xGd_yO_z trapping layer prepared by RF dual sputtering for the first time. A higher programming/erasing (P/E) speed and a longer data retention time can be obtained owing to improved trapping ability of HfGdO. Furthermore, in situ RF dual sputtering of Hf_xGd _yO_z MHHHS (metal/HfO₂/Hf_xGd _yO_z/HfO₂/Si) is a promising technology for future NVM because of its simplicity and its material compatibility in the semiconductor industry.

Original language	English
Pages (from-to)	05DF011-05DF014
Journal	Japanese Journal of Applied Physics
Volume	48
Issue number	5 PART 2
DOIs	https://doi.org/10.1143/JJAP.48.05DF01
State	Published - 05 2009

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Access to Document

10.1143/JJAP.48.05DF01

Cite this

@article{ac6f3b827361413e9196df7365372ca4,

title = "High-k HfxGdyOz charge trapping layer in silicon-oxide-nitride-silicon type nonvolatile memory by in situ radio frequency dual-sputtering method",

abstract = "In this paper, we propose a novel non-volatile memory (NVM) with a Hf xGdyOz trapping layer prepared by RF dual sputtering for the first time. A higher programming/erasing (P/E) speed and a longer data retention time can be obtained owing to improved trapping ability of HfGdO. Furthermore, in situ RF dual sputtering of HfxGd yOz MHHHS (metal/HfO2/HfxGd yOz/HfO2/Si) is a promising technology for future NVM because of its simplicity and its material compatibility in the semiconductor industry.",

author = "Chou, \{Pai Chi\} and Lai, \{Chao Sung\} and Wang, \{Jer Chyi\} and Wu, \{Woei Cherng\} and Liu, \{Li Chi\} and Fang, \{Yu Ching\} and Li Hsu and Wang, \{Hui Chun\}",

year = "2009",

month = may,

doi = "10.1143/JJAP.48.05DF01",

language = "英语",

volume = "48",

pages = "05DF011--05DF014",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "5 PART 2",

}

High-k Hf_xGd_yO_z charge trapping layer in silicon-oxide-nitride-silicon type nonvolatile memory by in situ radio frequency dual-sputtering method. / Chou, Pai Chi; Lai, Chao Sung; Wang, Jer Chyi et al.
In: Japanese Journal of Applied Physics, Vol. 48, No. 5 PART 2, 05.2009, p. 05DF011-05DF014.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - High-k HfxGdyOz charge trapping layer in silicon-oxide-nitride-silicon type nonvolatile memory by in situ radio frequency dual-sputtering method

AU - Chou, Pai Chi

AU - Lai, Chao Sung

AU - Wang, Jer Chyi

AU - Wu, Woei Cherng

AU - Liu, Li Chi

AU - Fang, Yu Ching

AU - Hsu, Li

AU - Wang, Hui Chun

PY - 2009/5

Y1 - 2009/5

N2 - In this paper, we propose a novel non-volatile memory (NVM) with a Hf xGdyOz trapping layer prepared by RF dual sputtering for the first time. A higher programming/erasing (P/E) speed and a longer data retention time can be obtained owing to improved trapping ability of HfGdO. Furthermore, in situ RF dual sputtering of HfxGd yOz MHHHS (metal/HfO2/HfxGd yOz/HfO2/Si) is a promising technology for future NVM because of its simplicity and its material compatibility in the semiconductor industry.

AB - In this paper, we propose a novel non-volatile memory (NVM) with a Hf xGdyOz trapping layer prepared by RF dual sputtering for the first time. A higher programming/erasing (P/E) speed and a longer data retention time can be obtained owing to improved trapping ability of HfGdO. Furthermore, in situ RF dual sputtering of HfxGd yOz MHHHS (metal/HfO2/HfxGd yOz/HfO2/Si) is a promising technology for future NVM because of its simplicity and its material compatibility in the semiconductor industry.

UR - https://www.scopus.com/pages/publications/70249146185

U2 - 10.1143/JJAP.48.05DF01

DO - 10.1143/JJAP.48.05DF01

M3 - 文章

AN - SCOPUS:70249146185

SN - 0021-4922

VL - 48

SP - 05DF011-05DF014

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 5 PART 2

ER -

High-k Hf_xGd_yO_z charge trapping layer in silicon-oxide-nitride-silicon type nonvolatile memory by in situ radio frequency dual-sputtering method

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this