High-k HfxGdyOz charge trapping layer in silicon-oxide-nitride-silicon type nonvolatile memory by in situ radio frequency dual-sputtering method

Pai Chi Chou*, Chao Sung Lai, Jer Chyi Wang, Woei Cherng Wu, Li Chi Liu, Yu Ching Fang, Li Hsu, Hui Chun Wang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

Fingerprint

Dive into the research topics of 'High-k HfxGdyOz charge trapping layer in silicon-oxide-nitride-silicon type nonvolatile memory by in situ radio frequency dual-sputtering method'. Together they form a unique fingerprint.

Chemistry

Material Science