@inproceedings{28c248b4dc2f4726ad0e96613b592d5f,
title = "High-K Ta2O5 polyoxide deposited on polycrystalline with NH3 plasma treatment",
abstract = "The high-k Ta2O5 in our study is used to apply as gate dielectric in polyoxide and low-temperture polycrystalline silicon thin-film transistor (LTPS-TFT) for performance improvements. Therefore, we employ the NH3-plasma treatment to improve the electrical characteristics of the high-k Ta2O5 polyoxide dielectric such as higher breakdown voltage and lower leakage current. It's seen that the nitrogen can pile up at the high-k Ta2O5 dielectric and polysilicon interface to form strong Si-N bondings from the SIMS and XPS analysis.",
author = "Kao, {Chyuan Haur} and Chen, {K. S.} and Chiu, {J. S.} and Chen, {C. S.} and Chan, {T. C.} and Luo, {W. S.} and Chung, {Y. T.}",
year = "2009",
doi = "10.1149/1.3117427",
language = "英语",
isbn = "9781566777124",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "335--340",
booktitle = "ECS Transactions - Silicon-on-Insulator Technology and Devices 14 - 215th Meeting of the Electrochemical Society",
edition = "4",
note = "14th International Symposium on Silicon-On-Insulator Technology and Devices - 215th Meeting of the Electrochemical Society ; Conference date: 24-05-2009 Through 29-05-2009",
}