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High light extraction efficiency of InGaN-based light-emitting diodes using the systematic design of sub-wavelength photonic crystals

  • V. C. Su*
  • , Y. H. You
  • , M. L. Lee
  • , Y. J. Chen
  • , C. H. Kuan
  • , P. H. Chen
  • , C. J. Hsieh
  • , R. M. Lin
  • , S. F. Yu
  • *Corresponding author for this work
  • National Taiwan University
  • Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

This paper reports the high light extraction efficiency will be obtained by considering the systematic design of two-dimensional sub-wavelength photonic crystals, which is created on the p-side of InGaN-based light emitting diodes.

Original languageEnglish
Title of host publication2012 IEEE Photonics Conference, IPC 2012
Pages342-343
Number of pages2
DOIs
StatePublished - 2012
Event25th IEEE Photonics Conference, IPC 2012 - Burlingame, CA, United States
Duration: 23 09 2012 → 27 09 2012

Publication series

Name2012 IEEE Photonics Conference, IPC 2012

Conference

Conference25th IEEE Photonics Conference, IPC 2012
Country/TerritoryUnited States
CityBurlingame, CA
Period23/09/12 → 27/09/12

Keywords

  • InGaN
  • light emitting diode
  • light extraction efficiency
  • photonic crystal

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