@inproceedings{9d527b0d03e54b71ae8fe68dbf83f76a,
title = "High linearity AlGaAs/InGaAs pseudomorphic HEMT driver amplifier using tunable field-plate voltage technology",
abstract = "A high-linearity AlGaAs/InGaAs pseudomorphic HEMT RF driver amplifier was developed using a tunable field-plate (FP) bias voltage technology in this study. In order to improve the circuit linearity performance, an FP device was employed at the output stage to provide an additional mechanism to suppress the power of the second and third-order harmonics in a two stage 5.2GHz driver amplifier. A standard Class AB driver amplifier without using FP technology was also implemented for comparison under the identical power consumption. The circuit with an FP device biased at VFP= -4V in the output stage demonstrated at least 2dB improvement on the third-order intercept point at input (IIP3) performance over the standard one within the useful power range in two tone measurement.",
keywords = "Driver amplifier, Field-plate, Linearity, pHEMT",
author = "Cheng, \{Chia Shih\} and Lin, \{Shao Wei\} and Fu, \{Jeffrey S.\} and Chiu, \{Hsien Chin\}",
year = "2009",
doi = "10.1109/csics.2009.5315757",
language = "英语",
isbn = "9781424451913",
series = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",
booktitle = "2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2009 - Technical Digest 2009",
note = "2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2009 - Integrated Circuits in GaAs, InP, SiGe, GaN, and Other Compound Semiconductors ; Conference date: 11-10-2009 Through 14-10-2009",
}