High mobility InN films grown by metal-organic vapor phase epitaxy

Chin An Chang; Chuan Feng Shih; Nai Chuan Chen; Pen Hsiu Chang; Kuo Shiun Liu

doi:10.1002/pssc.200405022

High mobility InN films grown by metal-organic vapor phase epitaxy

Chin An Chang^*, Chuan Feng Shih, Nai Chuan Chen, Pen Hsiu Chang, Kuo Shiun Liu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

22 Scopus citations

Abstract

We have grown single crystalline InN films on sapphire substrate using metal-organic vapor phase epitaxy (MOVPE). Electron mobility exceeding 1100 cm²/V sec was obtained for the as-grown films, with a donor concentration of 1-2 × 10¹⁹ cm^-3. The observed mobility was higher than other reports using the MOVPE technique, and was comparable to the best results with similar carrier concentration using molecular beam epitaxy. Photoluminescence measurement showed a broad emission near 1.6 μm, indicating a likely narrow bandgap similar to many recent reports on InN. X-ray photoelectron spectroscopic analysis revealed little oxygen in the InN films grown.

Original language	English
Pages (from-to)	2559-2563
Number of pages	5
Journal	Physica Status Solidi C: Conferences
Volume	1
Issue number	10
DOIs	https://doi.org/10.1002/pssc.200405022
State	Published - 2004

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title = "High mobility InN films grown by metal-organic vapor phase epitaxy",

abstract = "We have grown single crystalline InN films on sapphire substrate using metal-organic vapor phase epitaxy (MOVPE). Electron mobility exceeding 1100 cm2/V sec was obtained for the as-grown films, with a donor concentration of 1-2 × 1019 cm-3. The observed mobility was higher than other reports using the MOVPE technique, and was comparable to the best results with similar carrier concentration using molecular beam epitaxy. Photoluminescence measurement showed a broad emission near 1.6 μm, indicating a likely narrow bandgap similar to many recent reports on InN. X-ray photoelectron spectroscopic analysis revealed little oxygen in the InN films grown.",

author = "Chang, {Chin An} and Shih, {Chuan Feng} and Chen, {Nai Chuan} and Chang, {Pen Hsiu} and Liu, {Kuo Shiun}",

year = "2004",

doi = "10.1002/pssc.200405022",

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T1 - High mobility InN films grown by metal-organic vapor phase epitaxy

AU - Chang, Chin An

AU - Shih, Chuan Feng

AU - Chen, Nai Chuan

AU - Chang, Pen Hsiu

AU - Liu, Kuo Shiun

PY - 2004

Y1 - 2004

N2 - We have grown single crystalline InN films on sapphire substrate using metal-organic vapor phase epitaxy (MOVPE). Electron mobility exceeding 1100 cm2/V sec was obtained for the as-grown films, with a donor concentration of 1-2 × 1019 cm-3. The observed mobility was higher than other reports using the MOVPE technique, and was comparable to the best results with similar carrier concentration using molecular beam epitaxy. Photoluminescence measurement showed a broad emission near 1.6 μm, indicating a likely narrow bandgap similar to many recent reports on InN. X-ray photoelectron spectroscopic analysis revealed little oxygen in the InN films grown.

AB - We have grown single crystalline InN films on sapphire substrate using metal-organic vapor phase epitaxy (MOVPE). Electron mobility exceeding 1100 cm2/V sec was obtained for the as-grown films, with a donor concentration of 1-2 × 1019 cm-3. The observed mobility was higher than other reports using the MOVPE technique, and was comparable to the best results with similar carrier concentration using molecular beam epitaxy. Photoluminescence measurement showed a broad emission near 1.6 μm, indicating a likely narrow bandgap similar to many recent reports on InN. X-ray photoelectron spectroscopic analysis revealed little oxygen in the InN films grown.

UR - http://www.scopus.com/inward/record.url?scp=7044220475&partnerID=8YFLogxK

U2 - 10.1002/pssc.200405022

DO - 10.1002/pssc.200405022

M3 - 文章

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SN - 1610-1634

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SP - 2559

EP - 2563

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 10

ER -

High mobility InN films grown by metal-organic vapor phase epitaxy

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