High orientation InN growth on oxide buffer layer by metal-organic molecular beam epitaxy

Shou Yi Kuo*, Fang I. Lai, Wei Chun Chen, Woei Tyng Lin, Chien Nan Hsiao, Yu Kai Liu, Ji Lin Shen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

High orientation InN films on oxide buffer layer were grown by MOMBE. Near-infrared emission peak, centered at 0.75 eV, was observed from PL measurement. Experimental results reveal that oxide buffer layer can be used in lattice-mismatched III-V heteroepitaxial systems.

Original languageEnglish
Title of host publicationCLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics
DOIs
StatePublished - 2009
EventCLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics - Shanghai, China
Duration: 30 08 200903 09 2009

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Conference

ConferenceCLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics
Country/TerritoryChina
CityShanghai
Period30/08/0903/09/09

Keywords

  • Heteroepitaxial
  • Indium nitride
  • MOMBE

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