High orientation InN growth on oxide buffer layer by metal-organic molecular beam epitaxy

Shou Yi Kuo; Fang I. Lai; Wei Chun Chen; Woei Tyng Lin; Chien Nan Hsiao; Yu Kai Liu; Ji Lin Shen

doi:10.1109/CLEOPR.2009.5292468

High orientation InN growth on oxide buffer layer by metal-organic molecular beam epitaxy

Shou Yi Kuo^*
, Fang I. Lai
, Wei Chun Chen
, Woei Tyng Lin
, Chien Nan Hsiao
, Yu Kai Liu
, Ji Lin Shen

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

High orientation InN films on oxide buffer layer were grown by MOMBE. Near-infrared emission peak, centered at 0.75 eV, was observed from PL measurement. Experimental results reveal that oxide buffer layer can be used in lattice-mismatched III-V heteroepitaxial systems.

Original language	English
Title of host publication	CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics
DOIs	https://doi.org/10.1109/CLEOPR.2009.5292468
State	Published - 2009
Event	CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics - Shanghai, China Duration: 30 08 2009 → 03 09 2009

Publication series

Name	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Conference

Conference	CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics
Country/Territory	China
City	Shanghai
Period	30/08/09 → 03/09/09

Keywords

Heteroepitaxial
Indium nitride
MOMBE

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10.1109/CLEOPR.2009.5292468

Cite this

Kuo, S. Y., Lai, F. I., Chen, W. C., Lin, W. T., Hsiao, C. N., Liu, Y. K., & Shen, J. L. (2009). High orientation InN growth on oxide buffer layer by metal-organic molecular beam epitaxy. In CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics Article 5292468 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2009.5292468

@inproceedings{ab07461a7c5b48a08c2bc43b1d953611,

title = "High orientation InN growth on oxide buffer layer by metal-organic molecular beam epitaxy",

abstract = "High orientation InN films on oxide buffer layer were grown by MOMBE. Near-infrared emission peak, centered at 0.75 eV, was observed from PL measurement. Experimental results reveal that oxide buffer layer can be used in lattice-mismatched III-V heteroepitaxial systems.",

keywords = "Heteroepitaxial, Indium nitride, MOMBE",

author = "Kuo, \{Shou Yi\} and Lai, \{Fang I.\} and Chen, \{Wei Chun\} and Lin, \{Woei Tyng\} and Hsiao, \{Chien Nan\} and Liu, \{Yu Kai\} and Shen, \{Ji Lin\}",

year = "2009",

doi = "10.1109/CLEOPR.2009.5292468",

language = "英语",

isbn = "9781424438303",

series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

booktitle = "CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics",

note = "CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics ; Conference date: 30-08-2009 Through 03-09-2009",

}

Kuo, SY, Lai, FI, Chen, WC, Lin, WT, Hsiao, CN, Liu, YK & Shen, JL 2009, High orientation InN growth on oxide buffer layer by metal-organic molecular beam epitaxy. in CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics., 5292468, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics, Shanghai, China, 30/08/09. https://doi.org/10.1109/CLEOPR.2009.5292468

High orientation InN growth on oxide buffer layer by metal-organic molecular beam epitaxy. / Kuo, Shou Yi; Lai, Fang I.; Chen, Wei Chun et al.
CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics. 2009. 5292468 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High orientation InN growth on oxide buffer layer by metal-organic molecular beam epitaxy

AU - Kuo, Shou Yi

AU - Lai, Fang I.

AU - Chen, Wei Chun

AU - Lin, Woei Tyng

AU - Hsiao, Chien Nan

AU - Liu, Yu Kai

AU - Shen, Ji Lin

PY - 2009

Y1 - 2009

N2 - High orientation InN films on oxide buffer layer were grown by MOMBE. Near-infrared emission peak, centered at 0.75 eV, was observed from PL measurement. Experimental results reveal that oxide buffer layer can be used in lattice-mismatched III-V heteroepitaxial systems.

AB - High orientation InN films on oxide buffer layer were grown by MOMBE. Near-infrared emission peak, centered at 0.75 eV, was observed from PL measurement. Experimental results reveal that oxide buffer layer can be used in lattice-mismatched III-V heteroepitaxial systems.

KW - Heteroepitaxial

KW - Indium nitride

KW - MOMBE

UR - https://www.scopus.com/pages/publications/71249130337

U2 - 10.1109/CLEOPR.2009.5292468

DO - 10.1109/CLEOPR.2009.5292468

M3 - 会议稿件

AN - SCOPUS:71249130337

SN - 9781424438303

T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

BT - CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics

T2 - CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics

Y2 - 30 August 2009 through 3 September 2009

ER -

High orientation InN growth on oxide buffer layer by metal-organic molecular beam epitaxy

Abstract

Publication series

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Keywords

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