High orientation InN growth on oxide buffer layer by metal-organic molecular beam epitaxy

Shou Yi Kuo, Fang I. Lai, Wei Chun Chen, Woei Tyng Lin, Chien Nan Hsiao, Yu Kai Liu, Ji Lin Shen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

High orientation InN films on oxide buffer layer were grown by MOMBE. Near-infrared emission peak, centered at 0.75 eV, was observed from PL measurement. Experimental results reveal that oxide buffer layer can be used in lattice-mismatched III-V heteroepitaxial systems.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009
StatePublished - 2009
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009 - Shanghai, China
Duration: 30 08 200903 09 2009

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009
Country/TerritoryChina
CityShanghai
Period30/08/0903/09/09

Keywords

  • Heteroepitaxial
  • Indium nitride
  • MOMBE

Fingerprint

Dive into the research topics of 'High orientation InN growth on oxide buffer layer by metal-organic molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this