High peak-to-valley current ratio In0.3Ga0.7As/In0.29Al0.7, As resonant tunneling diodes grown on GaAs

H. P. Hwang, J. L. Shieh, R. M. Lin, J. I. Chyi, S. L. Tu, C. K. Peng, S. J. Yang

Research output: Contribution to conferenceConference Paperpeer-review

Abstract

We have investigated the current-voltage characteristics of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunneling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.

Original languageEnglish
DOIs
StatePublished - 1994
Externally publishedYes
Event1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
Duration: 12 07 199415 07 1994

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/TerritoryTaiwan
CityHsinchu
Period12/07/9415/07/94

Bibliographical note

Publisher Copyright:
© 1994 IEEE.

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