@inproceedings{3a683200d5b6410491b58660fb883705,
title = "High performacne InAs/AlSb HEMT with refractory iridium Schottky gate metal",
abstract = "In the work, a novel approach in fabricating high-performance of InAs/AlSb high electron mobility transistors using iridium (Ir) gate technology was proposed and investigated. The Ir-gate exhibited a superior metal work function which was beneficial for increasing Schottky barrier height (FB) of InAs/AlSb heterostructure from 0.54 to 0.58 eV. The Ir-gate InAs/AlSb HEMT exhibited a Vth of -0.9 V, a maximum drain current of 270 mA/mm, and a peak transconductance of 420 mS/mm. In contrast, the Vth of Ti-gate InAs/AlSb HEMT was -1.5 V, a maximum drain current of 257mA/mm, and a peak transconductance of 280mS /mm, respectively. It was suggested that Ir interface presented a high potential for high power transistor applications.",
keywords = "AlSb, Titanium Schottky barrier height, iridium",
author = "Lin, \{Wen Yu\} and Chen, \{Chao Hung\} and Chiu, \{Hsien Chin\} and Huang, \{Fan Hsiu\} and Hsueh, \{W. J.\} and Hsin, \{Yue Ming\} and Chyi, \{Jen Inn\}",
year = "2013",
doi = "10.1109/ICIPRM.2013.6562601",
language = "英语",
isbn = "9781467361309",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
booktitle = "2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013",
note = "2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013 ; Conference date: 19-05-2013 Through 23-05-2013",
}