High performance 0.15 μm gate pHEMT V-band tripler using compact microstrip resonant cell (CMRC) technique

Shao Wei Lin*, Po Yu Ke, Hsien Chin Chiu, Jeffrey S. Fu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A V -band current reuse frequency tripler is developed in 0.15um pseudomorphic high electron mobility transistor (pHEMT) technology. This tripler combines the compact microstrip resonant cell (CMRC) topology for suppress unwanted harmonic and current-reuse technique to improve the conversion gain. At 60 GHz, the tripler achieved as minimum conversion gain of -16.6 dB at an input power of 8 dBm; the suppressions of the fundamental and second harmonic frequencies were 22 dB and 27 dB, respectively.

Original languageEnglish
Title of host publicationTENCON 2011 - 2011 IEEE Region 10 Conference
Subtitle of host publicationTrends and Development in Converging Technology Towards 2020
Pages1240-1241
Number of pages2
DOIs
StatePublished - 2011
Event2011 IEEE Region 10 Conference: Trends and Development in Converging Technology Towards 2020, TENCON 2011 - Bali, Indonesia
Duration: 21 11 201124 11 2011

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON

Conference

Conference2011 IEEE Region 10 Conference: Trends and Development in Converging Technology Towards 2020, TENCON 2011
Country/TerritoryIndonesia
CityBali
Period21/11/1124/11/11

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