High-performance amorphous InGaZnO thin-film transistors with HfO2/Lu2O3/HfO2 sandwich gate dielectrics

Jim Long Her; Fa Hsyang Chen; Wei Chen Li; Tung Ming Pan

doi:10.1109/TED.2015.2411738

High-performance amorphous InGaZnO thin-film transistors with HfO₂/Lu₂O₃/HfO₂ sandwich gate dielectrics

Jim Long Her, Fa Hsyang Chen, Wei Chen Li, Tung Ming Pan

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

In this brief, a high-performance amorphous InGaZnO (α-IGZO) thin-film transistor (TFT) with a HfO₂/Lu₂O₃/HfO₂ (HLH) sandwich gate dielectric is demonstrated for the first time. Compared with the Lu2O3 dielectric, the α-IGZO TFT device using an HLH sandwich gate dielectric exhibited a low threshold voltage of 0.43 V, a high fieldeffect mobility of 17.2 cm²/Vs, a small subthreshold swing of 104 mV/decade, and a high I_ON/IOFF current ratio of 3.08×107, presumably because of the reduction of surface roughness at the dielectric-channel interface. Furthermore, the reliability of voltage stress can be improved using an HLH sandwich dielectric structure.

Original language	English
Article number	7070705
Pages (from-to)	1659-1662
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	5
DOIs	https://doi.org/10.1109/TED.2015.2411738
State	Published - 01 05 2015

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Amorphous InGaZnO (α-IGZO)
HfO/LuO/HfO (HLH)
LuO gate dielectric
thin-film transistor (TFT).

Access to Document

10.1109/TED.2015.2411738

Cite this

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title = "High-performance amorphous InGaZnO thin-film transistors with HfO2/Lu2O3/HfO2 sandwich gate dielectrics",

abstract = "In this brief, a high-performance amorphous InGaZnO (α-IGZO) thin-film transistor (TFT) with a HfO2/Lu2O3/HfO2 (HLH) sandwich gate dielectric is demonstrated for the first time. Compared with the Lu2O3 dielectric, the α-IGZO TFT device using an HLH sandwich gate dielectric exhibited a low threshold voltage of 0.43 V, a high fieldeffect mobility of 17.2 cm2/Vs, a small subthreshold swing of 104 mV/decade, and a high ION/IOFF current ratio of 3.08×107, presumably because of the reduction of surface roughness at the dielectric-channel interface. Furthermore, the reliability of voltage stress can be improved using an HLH sandwich dielectric structure.",

keywords = "Amorphous InGaZnO (α-IGZO), HfO/LuO/HfO (HLH), LuO gate dielectric, thin-film transistor (TFT).",

author = "Her, {Jim Long} and Chen, {Fa Hsyang} and Li, {Wei Chen} and Pan, {Tung Ming}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

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AU - Her, Jim Long

AU - Chen, Fa Hsyang

AU - Li, Wei Chen

AU - Pan, Tung Ming

PY - 2015/5/1

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N2 - In this brief, a high-performance amorphous InGaZnO (α-IGZO) thin-film transistor (TFT) with a HfO2/Lu2O3/HfO2 (HLH) sandwich gate dielectric is demonstrated for the first time. Compared with the Lu2O3 dielectric, the α-IGZO TFT device using an HLH sandwich gate dielectric exhibited a low threshold voltage of 0.43 V, a high fieldeffect mobility of 17.2 cm2/Vs, a small subthreshold swing of 104 mV/decade, and a high ION/IOFF current ratio of 3.08×107, presumably because of the reduction of surface roughness at the dielectric-channel interface. Furthermore, the reliability of voltage stress can be improved using an HLH sandwich dielectric structure.

AB - In this brief, a high-performance amorphous InGaZnO (α-IGZO) thin-film transistor (TFT) with a HfO2/Lu2O3/HfO2 (HLH) sandwich gate dielectric is demonstrated for the first time. Compared with the Lu2O3 dielectric, the α-IGZO TFT device using an HLH sandwich gate dielectric exhibited a low threshold voltage of 0.43 V, a high fieldeffect mobility of 17.2 cm2/Vs, a small subthreshold swing of 104 mV/decade, and a high ION/IOFF current ratio of 3.08×107, presumably because of the reduction of surface roughness at the dielectric-channel interface. Furthermore, the reliability of voltage stress can be improved using an HLH sandwich dielectric structure.

KW - Amorphous InGaZnO (α-IGZO)

KW - HfO/LuO/HfO (HLH)

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KW - thin-film transistor (TFT).

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