High-performance amorphous InGaZnO thin-film transistors with high-k Sm2O3 gate dielectrics

Fa Hsyang Chen; Yu Hsuan Shao; Wei Chen Li; Tung Ming Pan

High-performance amorphous InGaZnO thin-film transistors with high-k Sm₂O₃ gate dielectrics

Fa Hsyang Chen, Yu Hsuan Shao, Wei Chen Li, Tung Ming Pan^*

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

In this paper, we developed high-k Sm₂O₃ indium-gallium-zinc oxide thin-film transistor (IGZO TFTs) with and without RTA treatment. The high-k Sm₂O₃ oxide TFT device annealed at 400°C exhibited better electrical characteristics in terms of a large effective carrier mobility, high-driving current, low-threshold voltage, and high I_ON/I_OFF current ratio.

Original language	English
Pages	781-782
Number of pages	2
State	Published - 2010
Event	17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 01 12 2010 → 03 12 2010

Conference

Conference	17th International Display Workshops, IDW'10
Country/Territory	Japan
City	Fukuoka
Period	01/12/10 → 03/12/10

Cite this

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title = "High-performance amorphous InGaZnO thin-film transistors with high-k Sm2O3 gate dielectrics",

abstract = "In this paper, we developed high-k Sm2O3 indium-gallium-zinc oxide thin-film transistor (IGZO TFTs) with and without RTA treatment. The high-k Sm2O3 oxide TFT device annealed at 400°C exhibited better electrical characteristics in terms of a large effective carrier mobility, high-driving current, low-threshold voltage, and high ION/IOFF current ratio.",

author = "Chen, \{Fa Hsyang\} and Shao, \{Yu Hsuan\} and Li, \{Wei Chen\} and Pan, \{Tung Ming\}",

year = "2010",

language = "英语",

pages = "781--782",

note = "17th International Display Workshops, IDW'10 ; Conference date: 01-12-2010 Through 03-12-2010",

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TY - CONF

T1 - High-performance amorphous InGaZnO thin-film transistors with high-k Sm2O3 gate dielectrics

AU - Chen, Fa Hsyang

AU - Shao, Yu Hsuan

AU - Li, Wei Chen

AU - Pan, Tung Ming

PY - 2010

Y1 - 2010

N2 - In this paper, we developed high-k Sm2O3 indium-gallium-zinc oxide thin-film transistor (IGZO TFTs) with and without RTA treatment. The high-k Sm2O3 oxide TFT device annealed at 400°C exhibited better electrical characteristics in terms of a large effective carrier mobility, high-driving current, low-threshold voltage, and high ION/IOFF current ratio.

AB - In this paper, we developed high-k Sm2O3 indium-gallium-zinc oxide thin-film transistor (IGZO TFTs) with and without RTA treatment. The high-k Sm2O3 oxide TFT device annealed at 400°C exhibited better electrical characteristics in terms of a large effective carrier mobility, high-driving current, low-threshold voltage, and high ION/IOFF current ratio.

UR - https://www.scopus.com/pages/publications/79956310756

M3 - 论文

AN - SCOPUS:79956310756

SP - 781

EP - 782

T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

High-performance amorphous InGaZnO thin-film transistors with high-k Sm₂O₃ gate dielectrics

Abstract

Conference

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