Abstract
In this article, we have developed high- k PrTiO3 gate dielectric poly-Si thin-film transistors (TFTs) prepared under a CF4 plasma treatment. A high performance TFT device that has a low threshold voltage of 0.77 V, a high effective carrier mobility of 43.2 cm2 /V s, a small subthreshold swing of 156 mV/decade, and a high Ion / Ioff current ratio of 2.12× 107 can be achieved. This phenomenon is attributed to fluorine atoms in poly-Si films, thus passivating effectively the trap states near the oxide/poly-Si interface. The fluorine incorporation also enhanced the electrical reliability of the PrTiO3 poly-Si TFT.
Original language | English |
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Pages (from-to) | G44-G46 |
Journal | Electrochemical and Solid-State Letters |
Volume | 12 |
Issue number | 8 |
DOIs | |
State | Published - 2009 |