High-performance flexible Ni Sm2 O3 ITO ReRAM device for low-power nonvolatile memory applications

Somnath Mondal; Ching Hao Chueh; Tung Ming Pan

doi:10.1109/LED.2013.2272455

High-performance flexible Ni Sm₂ O₃ ITO ReRAM device for low-power nonvolatile memory applications

Somnath Mondal, Ching Hao Chueh, Tung Ming Pan

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

27 Scopus citations

Abstract

A high-performance very low-power flexible Ni Sm₂ O₃ indium~tin~oxide (ITO) resistive device for nonvolatile memories is demonstrated. The device exhibits a good memory margin of > 10³ ON/OFF current ratio with very low switching power of < 25μ W. Good memory retention of > 10⁵ s at 85° C and switching endurance of >10⁴ program-read-erase-read cycles is achieved in the highly flexible Ni Sm² O₃ ITO device. The low-power switching operation is believed to be because of the low-energy electron hopping conduction via oxide defects.

Original language	English
Article number	6565393
Pages (from-to)	1145-1147
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	9
DOIs	https://doi.org/10.1109/LED.2013.2272455
State	Published - 2013

Keywords

Flexible memory
Sm O
indium tin oxide (ITO)
resistive random access memory (ReRAM)

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10.1109/LED.2013.2272455

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title = "High-performance flexible Ni Sm2 O3 ITO ReRAM device for low-power nonvolatile memory applications",

abstract = "A high-performance very low-power flexible Ni Sm2 O3 indium\textasciitilde{}tin\textasciitilde{}oxide (ITO) resistive device for nonvolatile memories is demonstrated. The device exhibits a good memory margin of > 103 ON/OFF current ratio with very low switching power of < 25μ W. Good memory retention of > 105 s at 85° C and switching endurance of >104 program-read-erase-read cycles is achieved in the highly flexible Ni Sm2 O3 ITO device. The low-power switching operation is believed to be because of the low-energy electron hopping conduction via oxide defects.",

keywords = "Flexible memory, Sm O, indium tin oxide (ITO), resistive random access memory (ReRAM)",

author = "Somnath Mondal and Chueh, \{Ching Hao\} and Pan, \{Tung Ming\}",

year = "2013",

doi = "10.1109/LED.2013.2272455",

language = "英语",

volume = "34",

pages = "1145--1147",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - High-performance flexible Ni Sm2 O3 ITO ReRAM device for low-power nonvolatile memory applications

AU - Mondal, Somnath

AU - Chueh, Ching Hao

AU - Pan, Tung Ming

PY - 2013

Y1 - 2013

N2 - A high-performance very low-power flexible Ni Sm2 O3 indium~tin~oxide (ITO) resistive device for nonvolatile memories is demonstrated. The device exhibits a good memory margin of > 103 ON/OFF current ratio with very low switching power of < 25μ W. Good memory retention of > 105 s at 85° C and switching endurance of >104 program-read-erase-read cycles is achieved in the highly flexible Ni Sm2 O3 ITO device. The low-power switching operation is believed to be because of the low-energy electron hopping conduction via oxide defects.

AB - A high-performance very low-power flexible Ni Sm2 O3 indium~tin~oxide (ITO) resistive device for nonvolatile memories is demonstrated. The device exhibits a good memory margin of > 103 ON/OFF current ratio with very low switching power of < 25μ W. Good memory retention of > 105 s at 85° C and switching endurance of >104 program-read-erase-read cycles is achieved in the highly flexible Ni Sm2 O3 ITO device. The low-power switching operation is believed to be because of the low-energy electron hopping conduction via oxide defects.

KW - Flexible memory

KW - Sm O

KW - indium tin oxide (ITO)

KW - resistive random access memory (ReRAM)

UR - https://www.scopus.com/pages/publications/84883150891

U2 - 10.1109/LED.2013.2272455

DO - 10.1109/LED.2013.2272455

M3 - 文章

AN - SCOPUS:84883150891

SN - 0741-3106

VL - 34

SP - 1145

EP - 1147

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 6565393

ER -

High-performance flexible Ni Sm₂ O₃ ITO ReRAM device for low-power nonvolatile memory applications

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Keywords

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