High performance gadolinium oxide nanocrystal memory with optimized charge storage and blocking dielectric thickness

Chih Ting Lin*, Chi Feng Chang, Yu Ren Yen, Chin Hsiang Liao, Po Wei Huang, Jer Chyi Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The gadolinium oxide nanocrystal (Gd2O3-NCs) memory has been demonstrated with large memory window and good reliabilities. It has been proven that the charges are stored in the crystallized Gd2O 3-NCs which are surrounded by trapping-free amorphous phase of Gd2O3 film. The calculated deep trapping energy level is about 1.7eV below the conduction of the Gd2O3-NCs, and the energy band diagram of the Gd2O3-NCs memory has been proposed. In this study, we optimize the thickness of Gd2O 3 thin film to investigate the effect on the charge storage mechanism. The thickness of Gd2O3 thin film and blocking oxide could simultaneously dominate the operation speed and charge loss phenomenon. Thus, the most suitable film thicknesses for the Gd 2O3-NCs memory were proposed for future mass production nonvolatile memory application.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Pages24-26
Number of pages3
DOIs
StatePublished - 2013
Event2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore
Duration: 02 01 201304 01 2013

Publication series

NameProceedings - Winter Simulation Conference
ISSN (Print)0891-7736

Conference

Conference2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Country/TerritorySingapore
CitySingapore
Period02/01/1304/01/13

Keywords

  • GdO
  • Nonvolatile memory and Nanocrystal

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