Abstract
In this paper, we report an electrolyte-insulator-semiconductor (EIS) device incorporating Gd2O3 and GdTixOy sensing films deposited on Si substrates through reactive radio frequency sputtering for biomedical engineering applications. We employed X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy to investigate the structural and morphological features of these films with annealing at various temperatures. Compared with Gd2O3 sensing membrane, the EIS device featuring GdTixOy sensing membrane annealed at 900 °C exhibited a higher sensitivity (64.13 mV/pH in the solutions from pH 2 to 12), a smaller hysteresis voltage (1 mV in the pH loop 7→4→7→10→7), and a lower drift rate (0.4 mV/h in the pH 7 buffer solution). This outstanding pH sensitivity may be attributed to the high surface roughness of sensing film. Finally, we successfully demonstrated the use of EIS with glucose oxidase-immobilized alginate film for the detection of glucose in serum. The concentration of serum glucose measured by a GdTixOy EIS biosensor is comparable to that determined by commercial assay kit. The GdTixOy glucose biosensor can detect glucose with reasonable sensitivity (8.37 mV/mM) in solutions containing glucose at concentrations in the range 0.5-6 mM; this sensitivity is adequate for general clinical examination of blood glucose.
Original language | English |
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Pages (from-to) | 606-620 |
Number of pages | 15 |
Journal | International Journal of Electrochemical Science |
Volume | 8 |
Issue number | 1 |
State | Published - 01 2013 |
Keywords
- Electrolyte-insulator-semiconductor (EIS)
- GdO
- GdTiO
- GdTiO
- Glucose