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High-performance high-k Y
2
O
3
SONOS-type flash memory
Tung Ming Pan
*
, Wen Wei Yeh
*
Corresponding author for this work
Department of Electronic Engineering
Chang Gung University
Research output
:
Contribution to journal
›
Journal Article
›
peer-review
30
Scopus citations
Overview
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2
O
3
SONOS-type flash memory'. Together they form a unique fingerprint.
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Engineering
Performance
100%
Oxide-Nitride-Oxide
100%
Flash Memory
100%
Electric Potential
66%
Losses
66%
Characteristics
33%
Applications
33%
Windows
33%
Cycles
33%
Ray Photoelectron Spectroscopy
33%
Transmissions
33%
Data Retention
33%
Room Temperature
33%
High Density
33%
Charge Carrier
33%
Atomic Force Microscopy
33%
High Probability
33%
Ten Year
33%
Memory Type
33%
Chemistry
Oxide
100%
Nitride
100%
Silicon Oxide
100%
Liquid Film
66%
Voltage
66%
Application
33%
Time
33%
Density
33%
Atomic Force Microscopy
33%
X-Ray Photoelectron Spectroscopy
33%
Transmission Electron Microscopy
33%
Charge Carrier
33%
Ambient Reaction Temperature
33%
Computer Science
Flash Memory
100%
Threshold Voltage
66%
Application
33%
Programs
33%
And Gate
33%
Data Retention
33%
Nonvolatile
33%
High Probability
33%
Charge Carrier
33%
Room Temperature
33%
Material Science
Nitride Compound
100%
Silicon
100%
Oxide
100%
Charge Trapping
25%
Durability
25%
Temperature
25%
Density
25%
Charge Carrier
25%
Medicine and Dentistry
Memory
100%
Oxide
100%
Morphology
20%
Endurance
20%
Atomic Force Microscopy
20%
X Ray Photoemission Spectroscopy
20%
Acivicin
20%