High-performance InGaZnO thin-film transistor incorporating a HfO2/Er2O3/HfO2 stacked gate dielectric

Tung Ming Pan; Fa Hsyang Chen; Yu Hsuan Shao

doi:10.1039/c5ra05931c

High-performance InGaZnO thin-film transistor incorporating a HfO₂/Er₂O₃/HfO₂ stacked gate dielectric

Tung Ming Pan^*
, Fa Hsyang Chen
, Yu Hsuan Shao

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

12 Scopus citations

Abstract

In this paper, a HfO₂/Er₂O₃/HfO₂ (HEH) stacked structure was developed as a gate dielectric for amorphous InGaZnO (α-IGZO) thin-film transistor (TFT) applications. Atomic force microscopy and X-ray photoelectron spectroscopy were used to study the morphological and chemical features of Er₂O₃ and HEH films. In comparison to the Er₂O₃ dielectric, the α-IGZO TFT device incorporating a HEH stacked dielectric exhibited a lower threshold voltage of 0.7 V, a higher I_on/I_off current ratio of 2.86 × 10⁷, a larger field-effect mobility of 15.8 cm² V^-1 s^-1, and a smaller subthreshold swing of 101 mV per dec, suggesting a smooth surface at the dielectric-channel interface. Furthermore, the threshold voltage stability of α-IGZO TFT under positive gate voltage stress can be improved by using a HEH stacked structure.

Original language	English
Pages (from-to)	51286-51289
Number of pages	4
Journal	RSC Advances
Volume	5
Issue number	63
DOIs	https://doi.org/10.1039/c5ra05931c
State	Published - 2015

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© The Royal Society of Chemistry.

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@article{64aa065bc7c1421b9f8f5dfe867524d8,

title = "High-performance InGaZnO thin-film transistor incorporating a HfO2/Er2O3/HfO2 stacked gate dielectric",

abstract = "In this paper, a HfO2/Er2O3/HfO2 (HEH) stacked structure was developed as a gate dielectric for amorphous InGaZnO (α-IGZO) thin-film transistor (TFT) applications. Atomic force microscopy and X-ray photoelectron spectroscopy were used to study the morphological and chemical features of Er2O3 and HEH films. In comparison to the Er2O3 dielectric, the α-IGZO TFT device incorporating a HEH stacked dielectric exhibited a lower threshold voltage of 0.7 V, a higher Ion/Ioff current ratio of 2.86 × 107, a larger field-effect mobility of 15.8 cm2 V-1 s-1, and a smaller subthreshold swing of 101 mV per dec, suggesting a smooth surface at the dielectric-channel interface. Furthermore, the threshold voltage stability of α-IGZO TFT under positive gate voltage stress can be improved by using a HEH stacked structure.",

author = "Pan, \{Tung Ming\} and Chen, \{Fa Hsyang\} and Shao, \{Yu Hsuan\}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2015",

doi = "10.1039/c5ra05931c",

language = "英语",

volume = "5",

pages = "51286--51289",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "63",

}

TY - JOUR

T1 - High-performance InGaZnO thin-film transistor incorporating a HfO2/Er2O3/HfO2 stacked gate dielectric

AU - Pan, Tung Ming

AU - Chen, Fa Hsyang

AU - Shao, Yu Hsuan

PY - 2015

Y1 - 2015

N2 - In this paper, a HfO2/Er2O3/HfO2 (HEH) stacked structure was developed as a gate dielectric for amorphous InGaZnO (α-IGZO) thin-film transistor (TFT) applications. Atomic force microscopy and X-ray photoelectron spectroscopy were used to study the morphological and chemical features of Er2O3 and HEH films. In comparison to the Er2O3 dielectric, the α-IGZO TFT device incorporating a HEH stacked dielectric exhibited a lower threshold voltage of 0.7 V, a higher Ion/Ioff current ratio of 2.86 × 107, a larger field-effect mobility of 15.8 cm2 V-1 s-1, and a smaller subthreshold swing of 101 mV per dec, suggesting a smooth surface at the dielectric-channel interface. Furthermore, the threshold voltage stability of α-IGZO TFT under positive gate voltage stress can be improved by using a HEH stacked structure.

AB - In this paper, a HfO2/Er2O3/HfO2 (HEH) stacked structure was developed as a gate dielectric for amorphous InGaZnO (α-IGZO) thin-film transistor (TFT) applications. Atomic force microscopy and X-ray photoelectron spectroscopy were used to study the morphological and chemical features of Er2O3 and HEH films. In comparison to the Er2O3 dielectric, the α-IGZO TFT device incorporating a HEH stacked dielectric exhibited a lower threshold voltage of 0.7 V, a higher Ion/Ioff current ratio of 2.86 × 107, a larger field-effect mobility of 15.8 cm2 V-1 s-1, and a smaller subthreshold swing of 101 mV per dec, suggesting a smooth surface at the dielectric-channel interface. Furthermore, the threshold voltage stability of α-IGZO TFT under positive gate voltage stress can be improved by using a HEH stacked structure.

UR - https://www.scopus.com/pages/publications/84935825316

U2 - 10.1039/c5ra05931c

DO - 10.1039/c5ra05931c

M3 - 文章

AN - SCOPUS:84935825316

SN - 2046-2069

VL - 5

SP - 51286

EP - 51289

JO - RSC Advances

JF - RSC Advances

IS - 63

ER -

High-performance InGaZnO thin-film transistor incorporating a HfO₂/Er₂O₃/HfO₂ stacked gate dielectric

Abstract

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