High-performance LTPS TFT for high-k Tb2O3 with CF4 plasma treatment

Fa Hsyang Chen; Zhi Hong Li; Yu Hsuan Shao; Wei Chen Li; Tung Ming Pan

High-performance LTPS TFT for high-k Tb₂O₃ with CF₄ plasma treatment

Fa Hsyang Chen, Zhi Hong Li, Yu Hsuan Shao, Wei Chen Li, Tung Ming Pan^*

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

The high-k Tb₂O₃ poly-Si TFT device using a 20 W plasma power treatment exhibited good electrical performances, including a high effective carrier mobility, a low-threshold voltage, a small subthreshold slope, and a high I_ON/I_OFF current ratio. It also enhanced electrical reliabilities including hot carrier and positive bias temperature instability.

Original language	English
Pages	783-784
Number of pages	2
State	Published - 2010
Event	17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 01 12 2010 → 03 12 2010

Conference

Conference	17th International Display Workshops, IDW'10
Country/Territory	Japan
City	Fukuoka
Period	01/12/10 → 03/12/10

Cite this

@conference{36c13c0969d14fb5a9e18e566de5e8f7,

title = "High-performance LTPS TFT for high-k Tb2O3 with CF4 plasma treatment",

abstract = "The high-k Tb2O3 poly-Si TFT device using a 20 W plasma power treatment exhibited good electrical performances, including a high effective carrier mobility, a low-threshold voltage, a small subthreshold slope, and a high ION/IOFF current ratio. It also enhanced electrical reliabilities including hot carrier and positive bias temperature instability.",

author = "Chen, {Fa Hsyang} and Li, {Zhi Hong} and Shao, {Yu Hsuan} and Li, {Wei Chen} and Pan, {Tung Ming}",

year = "2010",

language = "英语",

pages = "783--784",

note = "17th International Display Workshops, IDW'10 ; Conference date: 01-12-2010 Through 03-12-2010",

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TY - CONF

T1 - High-performance LTPS TFT for high-k Tb2O3 with CF4 plasma treatment

AU - Chen, Fa Hsyang

AU - Li, Zhi Hong

AU - Shao, Yu Hsuan

AU - Li, Wei Chen

AU - Pan, Tung Ming

PY - 2010

Y1 - 2010

N2 - The high-k Tb2O3 poly-Si TFT device using a 20 W plasma power treatment exhibited good electrical performances, including a high effective carrier mobility, a low-threshold voltage, a small subthreshold slope, and a high ION/IOFF current ratio. It also enhanced electrical reliabilities including hot carrier and positive bias temperature instability.

AB - The high-k Tb2O3 poly-Si TFT device using a 20 W plasma power treatment exhibited good electrical performances, including a high effective carrier mobility, a low-threshold voltage, a small subthreshold slope, and a high ION/IOFF current ratio. It also enhanced electrical reliabilities including hot carrier and positive bias temperature instability.

UR - http://www.scopus.com/inward/record.url?scp=79956309250&partnerID=8YFLogxK

M3 - 论文

AN - SCOPUS:79956309250

SP - 783

EP - 784

T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

High-performance LTPS TFT for high-k Tb₂O₃ with CF₄ plasma treatment

Abstract

Conference

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