High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology

Albert Chin; H. L. Kao; D. S. Yu; C. C. Liao; C. Zhu; M. F. Li; Shiyang Zhu; Dim Lee Kwong

High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology

Albert Chin^*
, H. L. Kao
, D. S. Yu
, C. C. Liao
, C. Zhu
, M. F. Li
, Shiyang Zhu
, Dim Lee Kwong

^*Corresponding author for this work

National Yang Ming Chiao Tung University
National University of Singapore
University of Texas at Austin

Research output: Contribution to conference › Conference Paper › peer-review

1 Scopus citations

Abstract

We propose and demonstrate a new VLSI structure using high performance metal-gate/high-κ MOSFETs and high-Q RF passive devices on Ge-on- Insulator (GOI) platform. In additional to high RF performance passive devices on insulating Si formed by ion implantation, the metal-gate/(La)AlO ₃/GOI MOSFETs have 1.7-2.0X improved electron and hole mobility with the merits of minimizing interfacial reaction, high-κ crystallization, Fermi-level pinning, and impurity diffusion due to low thermal budget of 500°C RTA.

Original language	English
Pages	302-305
Number of pages	4
State	Published - 2004
Externally published	Yes
Event	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: 18 10 2004 → 21 10 2004

Conference

Conference	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country/Territory	China
City	Beijing
Period	18/10/04 → 21/10/04

Cite this

@conference{2ba6693a59704daea2db6598b656cdd2,

title = "High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology",

abstract = "We propose and demonstrate a new VLSI structure using high performance metal-gate/high-κ MOSFETs and high-Q RF passive devices on Ge-on- Insulator (GOI) platform. In additional to high RF performance passive devices on insulating Si formed by ion implantation, the metal-gate/(La)AlO 3/GOI MOSFETs have 1.7-2.0X improved electron and hole mobility with the merits of minimizing interfacial reaction, high-κ crystallization, Fermi-level pinning, and impurity diffusion due to low thermal budget of 500°C RTA.",

author = "Albert Chin and Kao, \{H. L.\} and Yu, \{D. S.\} and Liao, \{C. C.\} and C. Zhu and Li, \{M. F.\} and Shiyang Zhu and Kwong, \{Dim Lee\}",

year = "2004",

language = "英语",

pages = "302--305",

note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

}

Chin, A, Kao, HL, Yu, DS, Liao, CC, Zhu, C, Li, MF, Zhu, S & Kwong, DL 2004, 'High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology', Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China, 18/10/04 - 21/10/04 pp. 302-305.

High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology. / Chin, Albert; Kao, H. L.; Yu, D. S. et al.
2004. 302-305 Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.

Research output: Contribution to conference › Conference Paper › peer-review

TY - CONF

T1 - High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology

AU - Chin, Albert

AU - Kao, H. L.

AU - Yu, D. S.

AU - Liao, C. C.

AU - Zhu, C.

AU - Li, M. F.

AU - Zhu, Shiyang

AU - Kwong, Dim Lee

PY - 2004

Y1 - 2004

N2 - We propose and demonstrate a new VLSI structure using high performance metal-gate/high-κ MOSFETs and high-Q RF passive devices on Ge-on- Insulator (GOI) platform. In additional to high RF performance passive devices on insulating Si formed by ion implantation, the metal-gate/(La)AlO 3/GOI MOSFETs have 1.7-2.0X improved electron and hole mobility with the merits of minimizing interfacial reaction, high-κ crystallization, Fermi-level pinning, and impurity diffusion due to low thermal budget of 500°C RTA.

AB - We propose and demonstrate a new VLSI structure using high performance metal-gate/high-κ MOSFETs and high-Q RF passive devices on Ge-on- Insulator (GOI) platform. In additional to high RF performance passive devices on insulating Si formed by ion implantation, the metal-gate/(La)AlO 3/GOI MOSFETs have 1.7-2.0X improved electron and hole mobility with the merits of minimizing interfacial reaction, high-κ crystallization, Fermi-level pinning, and impurity diffusion due to low thermal budget of 500°C RTA.

UR - https://www.scopus.com/pages/publications/21644466444

M3 - 论文

AN - SCOPUS:21644466444

SP - 302

EP - 305

T2 - 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004

Y2 - 18 October 2004 through 21 October 2004

ER -

High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology

Abstract

Conference

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