High performance micromachined GaN on Si HEMT with backside diamondlke-carbon/titanium heat dissipation layer

Hsien Chin Chiu; Chih Wei Yang; Hsiang Chun Wang; Ming Chi Kan

doi:10.1109/ISPSD.2014.6856018

High performance micromachined GaN on Si HEMT with backside diamondlke-carbon/titanium heat dissipation layer

Hsien Chin Chiu, Chih Wei Yang, Hsiang Chun Wang, Ming Chi Kan

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, a thermally stable air-bridged matrix (ABM) AlGaN/GaN high electron mobility transistor (HEMT) with micromachined diamondlke carbon (DLC)/Titanium thermal-distributed layers was demonstrated. After removing the Si substrate beneath the HEMT, the DLC/Ti heat dissipation layers were deposited on the backside of the HEMT, and a significant breakdown voltage improvement was observed. The drain and source terminals were arranged as the matrix type. Compared to the traditional multi-fingers HEMT, the current density was doubled. In addition, the self-heating phenomenon of power cell was also suppressed by the backside DLC/Ti heat dissipation layer.

Original language	English
Title of host publication	Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	229-232
Number of pages	4
ISBN (Print)	9781479929177
DOIs	https://doi.org/10.1109/ISPSD.2014.6856018
State	Published - 2014
Event	26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 - Waikoloa, HI, United States Duration: 15 06 2014 → 19 06 2014

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)	1063-6854

Conference

Conference	26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
Country/Territory	United States
City	Waikoloa, HI
Period	15/06/14 → 19/06/14

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10.1109/ISPSD.2014.6856018

Cite this

Chiu, H. C., Yang, C. W., Wang, H. C., & Kan, M. C. (2014). High performance micromachined GaN on Si HEMT with backside diamondlke-carbon/titanium heat dissipation layer. In Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 (pp. 229-232). Article 6856018 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2014.6856018

Chiu, Hsien Chin ; Yang, Chih Wei ; Wang, Hsiang Chun et al. / High performance micromachined GaN on Si HEMT with backside diamondlke-carbon/titanium heat dissipation layer. Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 229-232 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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title = "High performance micromachined GaN on Si HEMT with backside diamondlke-carbon/titanium heat dissipation layer",

abstract = "In this work, a thermally stable air-bridged matrix (ABM) AlGaN/GaN high electron mobility transistor (HEMT) with micromachined diamondlke carbon (DLC)/Titanium thermal-distributed layers was demonstrated. After removing the Si substrate beneath the HEMT, the DLC/Ti heat dissipation layers were deposited on the backside of the HEMT, and a significant breakdown voltage improvement was observed. The drain and source terminals were arranged as the matrix type. Compared to the traditional multi-fingers HEMT, the current density was doubled. In addition, the self-heating phenomenon of power cell was also suppressed by the backside DLC/Ti heat dissipation layer.",

author = "Chiu, {Hsien Chin} and Yang, {Chih Wei} and Wang, {Hsiang Chun} and Kan, {Ming Chi}",

year = "2014",

doi = "10.1109/ISPSD.2014.6856018",

language = "英语",

isbn = "9781479929177",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "229--232",

booktitle = "Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014",

address = "美国",

note = "26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 ; Conference date: 15-06-2014 Through 19-06-2014",

}

Chiu, HC, Yang, CW, Wang, HC & Kan, MC 2014, High performance micromachined GaN on Si HEMT with backside diamondlke-carbon/titanium heat dissipation layer. in Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014., 6856018, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Institute of Electrical and Electronics Engineers Inc., pp. 229-232, 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014, Waikoloa, HI, United States, 15/06/14. https://doi.org/10.1109/ISPSD.2014.6856018

High performance micromachined GaN on Si HEMT with backside diamondlke-carbon/titanium heat dissipation layer. / Chiu, Hsien Chin; Yang, Chih Wei; Wang, Hsiang Chun et al.
Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 229-232 6856018 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kan, Ming Chi

PY - 2014

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N2 - In this work, a thermally stable air-bridged matrix (ABM) AlGaN/GaN high electron mobility transistor (HEMT) with micromachined diamondlke carbon (DLC)/Titanium thermal-distributed layers was demonstrated. After removing the Si substrate beneath the HEMT, the DLC/Ti heat dissipation layers were deposited on the backside of the HEMT, and a significant breakdown voltage improvement was observed. The drain and source terminals were arranged as the matrix type. Compared to the traditional multi-fingers HEMT, the current density was doubled. In addition, the self-heating phenomenon of power cell was also suppressed by the backside DLC/Ti heat dissipation layer.

AB - In this work, a thermally stable air-bridged matrix (ABM) AlGaN/GaN high electron mobility transistor (HEMT) with micromachined diamondlke carbon (DLC)/Titanium thermal-distributed layers was demonstrated. After removing the Si substrate beneath the HEMT, the DLC/Ti heat dissipation layers were deposited on the backside of the HEMT, and a significant breakdown voltage improvement was observed. The drain and source terminals were arranged as the matrix type. Compared to the traditional multi-fingers HEMT, the current density was doubled. In addition, the self-heating phenomenon of power cell was also suppressed by the backside DLC/Ti heat dissipation layer.

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BT - Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014

PB - Institute of Electrical and Electronics Engineers Inc.

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Chiu HC, Yang CW, Wang HC, Kan MC. High performance micromachined GaN on Si HEMT with backside diamondlke-carbon/titanium heat dissipation layer. In Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 229-232. 6856018. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2014.6856018

High performance micromachined GaN on Si HEMT with backside diamondlke-carbon/titanium heat dissipation layer

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