High-performance multilevel resistive switching gadolinium oxide memristors with hydrogen plasma immersion ion implantation treatment

Jer Chyi Wang; Chih Hsien Hsu; Yu Ren Ye; Chao Sung Lai; Chi Fong Ai; Wen Fa Tsai

doi:10.1109/LED.2014.2304970

High-performance multilevel resistive switching gadolinium oxide memristors with hydrogen plasma immersion ion implantation treatment

Jer Chyi Wang, Chih Hsien Hsu, Yu Ren Ye, Chao Sung Lai, Chi Fong Ai, Wen Fa Tsai

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

21 Scopus citations

Abstract

Multilevel resistive switching (RS) of gadolinium oxide (Gd _xO_y) memristors treated by hydrogen plasma immersion ion implantation (PIII) was investigated. Hydrogen ions were implanted at the Pt}/(Gd_xO_y) interface to modify the oxygen-vacancy distribution, which was examined by the X-ray photoelectron spectroscopy. After the hydrogen PIII treatment, a forming process is needed to operate the (Gd _xO_y) memristors and the RS mechanism is changed from Schottky emission to space-charge-limited conduction. Superior multilevel RS properties such as data retention for more than 10⁴ s at 85 ° C}, and sequentially cycling test for more than 10³ times with a resistance ratio of approximately one order of magnitude between each state are realized, making the future high-density flash memory possible.

Original language	English
Article number	6748023
Pages (from-to)	452-454
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	4
DOIs	https://doi.org/10.1109/LED.2014.2304970
State	Published - 04 2014

Keywords

Oxygen vacancy
Plasma immersion ion implantation
gadolinium oxide
hydrogen
memristor
resistive switching

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10.1109/LED.2014.2304970

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title = "High-performance multilevel resistive switching gadolinium oxide memristors with hydrogen plasma immersion ion implantation treatment",

abstract = "Multilevel resistive switching (RS) of gadolinium oxide (Gd xOy) memristors treated by hydrogen plasma immersion ion implantation (PIII) was investigated. Hydrogen ions were implanted at the Pt\}/(GdxOy) interface to modify the oxygen-vacancy distribution, which was examined by the X-ray photoelectron spectroscopy. After the hydrogen PIII treatment, a forming process is needed to operate the (Gd xOy) memristors and the RS mechanism is changed from Schottky emission to space-charge-limited conduction. Superior multilevel RS properties such as data retention for more than 104 s at 85 ° C\}, and sequentially cycling test for more than 103 times with a resistance ratio of approximately one order of magnitude between each state are realized, making the future high-density flash memory possible.",

keywords = "Oxygen vacancy, Plasma immersion ion implantation, gadolinium oxide, hydrogen, memristor, resistive switching",

author = "Wang, \{Jer Chyi\} and Hsu, \{Chih Hsien\} and Ye, \{Yu Ren\} and Lai, \{Chao Sung\} and Ai, \{Chi Fong\} and Tsai, \{Wen Fa\}",

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doi = "10.1109/LED.2014.2304970",

language = "英语",

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T1 - High-performance multilevel resistive switching gadolinium oxide memristors with hydrogen plasma immersion ion implantation treatment

AU - Wang, Jer Chyi

AU - Hsu, Chih Hsien

AU - Ye, Yu Ren

AU - Lai, Chao Sung

AU - Ai, Chi Fong

AU - Tsai, Wen Fa

PY - 2014/4

Y1 - 2014/4

N2 - Multilevel resistive switching (RS) of gadolinium oxide (Gd xOy) memristors treated by hydrogen plasma immersion ion implantation (PIII) was investigated. Hydrogen ions were implanted at the Pt}/(GdxOy) interface to modify the oxygen-vacancy distribution, which was examined by the X-ray photoelectron spectroscopy. After the hydrogen PIII treatment, a forming process is needed to operate the (Gd xOy) memristors and the RS mechanism is changed from Schottky emission to space-charge-limited conduction. Superior multilevel RS properties such as data retention for more than 104 s at 85 ° C}, and sequentially cycling test for more than 103 times with a resistance ratio of approximately one order of magnitude between each state are realized, making the future high-density flash memory possible.

AB - Multilevel resistive switching (RS) of gadolinium oxide (Gd xOy) memristors treated by hydrogen plasma immersion ion implantation (PIII) was investigated. Hydrogen ions were implanted at the Pt}/(GdxOy) interface to modify the oxygen-vacancy distribution, which was examined by the X-ray photoelectron spectroscopy. After the hydrogen PIII treatment, a forming process is needed to operate the (Gd xOy) memristors and the RS mechanism is changed from Schottky emission to space-charge-limited conduction. Superior multilevel RS properties such as data retention for more than 104 s at 85 ° C}, and sequentially cycling test for more than 103 times with a resistance ratio of approximately one order of magnitude between each state are realized, making the future high-density flash memory possible.

KW - Oxygen vacancy

KW - Plasma immersion ion implantation

KW - gadolinium oxide

KW - hydrogen

KW - memristor

KW - resistive switching

UR - https://www.scopus.com/pages/publications/84897377021

U2 - 10.1109/LED.2014.2304970

DO - 10.1109/LED.2014.2304970

M3 - 文章

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JF - IEEE Electron Device Letters

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ER -

High-performance multilevel resistive switching gadolinium oxide memristors with hydrogen plasma immersion ion implantation treatment

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Keywords

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