High performance NiOx extended-gate field-effect transistor biosensor for detection of uric acid

Tung Ming Pan*, Chen Hung Lin

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

8 Scopus citations

Abstract

In this paper, we developed a high performance NiOx extended-gate field-effect transistor (EGFET) biosensor for detection of uric acid. The structural and sensing properties of the NiOx sensing film deposited on a n+-type Si substrate was examined for an EGFET pH sensor. X-ray diffraction, atomic force microscope and X-ray photoelectron spectroscopy were used to analyze the film features of the NiOx sensing film. The NiOx sensing film based on EGFET exhibited a high pH sensitivity of 58.53 mV pH−1, a small hysteresis voltage of 1.4 mV and a low drift rate of 0.30 mV h−1. Moreover, the NiOx EGFET biosensor showed a high linearity in the uric acid range between 1 and 30 mg dl−1. In addition, this NiOx EGFET biosensor demonstrated a very good selectivity to uric acid over other interfering substrates (ascorbic acid, glucose, urea).

Original languageEnglish
Article number017511
JournalJournal of the Electrochemical Society
Volume168
Issue number1
DOIs
StatePublished - 01 2021

Bibliographical note

Publisher Copyright:
© 2021 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited

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