High performance NiOx extended-gate field-effect transistor biosensor for detection of uric acid

Tung Ming Pan; Chen Hung Lin

doi:10.1149/1945-7111/abdc63

High performance NiO_x extended-gate field-effect transistor biosensor for detection of uric acid

Tung Ming Pan^*
, Chen Hung Lin

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

10 Scopus citations

Abstract

In this paper, we developed a high performance NiO_x extended-gate field-effect transistor (EGFET) biosensor for detection of uric acid. The structural and sensing properties of the NiO_x sensing film deposited on a n⁺-type Si substrate was examined for an EGFET pH sensor. X-ray diffraction, atomic force microscope and X-ray photoelectron spectroscopy were used to analyze the film features of the NiO_x sensing film. The NiO_x sensing film based on EGFET exhibited a high pH sensitivity of 58.53 mV pH⁻¹, a small hysteresis voltage of 1.4 mV and a low drift rate of 0.30 mV h⁻¹. Moreover, the NiO_x EGFET biosensor showed a high linearity in the uric acid range between 1 and 30 mg dl⁻¹. In addition, this NiO_x EGFET biosensor demonstrated a very good selectivity to uric acid over other interfering substrates (ascorbic acid, glucose, urea).

Original language	English
Article number	017511
Journal	Journal of the Electrochemical Society
Volume	168
Issue number	1
DOIs	https://doi.org/10.1149/1945-7111/abdc63
State	Published - 01 2021

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© 2021 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited

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title = "High performance NiOx extended-gate field-effect transistor biosensor for detection of uric acid",

abstract = "In this paper, we developed a high performance NiOx extended-gate field-effect transistor (EGFET) biosensor for detection of uric acid. The structural and sensing properties of the NiOx sensing film deposited on a n+-type Si substrate was examined for an EGFET pH sensor. X-ray diffraction, atomic force microscope and X-ray photoelectron spectroscopy were used to analyze the film features of the NiOx sensing film. The NiOx sensing film based on EGFET exhibited a high pH sensitivity of 58.53 mV pH−1, a small hysteresis voltage of 1.4 mV and a low drift rate of 0.30 mV h−1. Moreover, the NiOx EGFET biosensor showed a high linearity in the uric acid range between 1 and 30 mg dl−1. In addition, this NiOx EGFET biosensor demonstrated a very good selectivity to uric acid over other interfering substrates (ascorbic acid, glucose, urea).",

author = "Pan, \{Tung Ming\} and Lin, \{Chen Hung\}",

note = "Publisher Copyright: {\textcopyright} 2021 The Electrochemical Society ({\textquotedblleft}ECS{\textquotedblright}). Published on behalf of ECS by IOP Publishing Limited",

year = "2021",

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doi = "10.1149/1945-7111/abdc63",

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AB - In this paper, we developed a high performance NiOx extended-gate field-effect transistor (EGFET) biosensor for detection of uric acid. The structural and sensing properties of the NiOx sensing film deposited on a n+-type Si substrate was examined for an EGFET pH sensor. X-ray diffraction, atomic force microscope and X-ray photoelectron spectroscopy were used to analyze the film features of the NiOx sensing film. The NiOx sensing film based on EGFET exhibited a high pH sensitivity of 58.53 mV pH−1, a small hysteresis voltage of 1.4 mV and a low drift rate of 0.30 mV h−1. Moreover, the NiOx EGFET biosensor showed a high linearity in the uric acid range between 1 and 30 mg dl−1. In addition, this NiOx EGFET biosensor demonstrated a very good selectivity to uric acid over other interfering substrates (ascorbic acid, glucose, urea).

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High performance NiO_x extended-gate field-effect transistor biosensor for detection of uric acid

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