High-performance Ni23TaN metal-insulator-metal capacitors

Somnath Mondal; Tung Ming Pan

doi:10.1109/LED.2011.2163611

High-performance Ni₂₃TaN metal-insulator-metal capacitors

Somnath Mondal^*
, Tung Ming Pan

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

24 Scopus citations

Abstract

We fabricate the Ni_Lu2O3 _TaN metal-insulator-metal capacitor with a high capacitance density of 7.5 fFmum², a relatively small quadratic voltage coefficient of capacitance (VCC) of 75 ppm/V}², a low leakage current of 5times 10^-8 Acm}² at -1 V, and an excellent ten-year reliability with a very low \Delta C/C of 0.51% at 3 V. These small VCC value and good reliability are attributed to a reduction of carrier injection and trapping into the dielectric.

Original language	English
Article number	5993495
Pages (from-to)	1576-1578
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	11
DOIs	https://doi.org/10.1109/LED.2011.2163611
State	Published - 11 2011

Keywords

Lu
Metal-insulator-metal (MIM)
Ni
Reliability
TaN

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10.1109/LED.2011.2163611

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title = "High-performance Ni23TaN metal-insulator-metal capacitors",

abstract = "We fabricate the NiLu2O3 TaN metal-insulator-metal capacitor with a high capacitance density of 7.5 fFmum2, a relatively small quadratic voltage coefficient of capacitance (VCC) of 75 ppm/V\}2, a low leakage current of 5times 10-8 Acm\}2 at -1 V, and an excellent ten-year reliability with a very low \textbackslash{}Delta C/C of 0.51\% at 3 V. These small VCC value and good reliability are attributed to a reduction of carrier injection and trapping into the dielectric.",

keywords = "Lu, Metal-insulator-metal (MIM), Ni, Reliability, TaN",

author = "Somnath Mondal and Pan, \{Tung Ming\}",

year = "2011",

month = nov,

doi = "10.1109/LED.2011.2163611",

language = "英语",

volume = "32",

pages = "1576--1578",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - High-performance Ni23TaN metal-insulator-metal capacitors

AU - Mondal, Somnath

AU - Pan, Tung Ming

PY - 2011/11

Y1 - 2011/11

N2 - We fabricate the NiLu2O3 TaN metal-insulator-metal capacitor with a high capacitance density of 7.5 fFmum2, a relatively small quadratic voltage coefficient of capacitance (VCC) of 75 ppm/V}2, a low leakage current of 5times 10-8 Acm}2 at -1 V, and an excellent ten-year reliability with a very low \Delta C/C of 0.51% at 3 V. These small VCC value and good reliability are attributed to a reduction of carrier injection and trapping into the dielectric.

AB - We fabricate the NiLu2O3 TaN metal-insulator-metal capacitor with a high capacitance density of 7.5 fFmum2, a relatively small quadratic voltage coefficient of capacitance (VCC) of 75 ppm/V}2, a low leakage current of 5times 10-8 Acm}2 at -1 V, and an excellent ten-year reliability with a very low \Delta C/C of 0.51% at 3 V. These small VCC value and good reliability are attributed to a reduction of carrier injection and trapping into the dielectric.

KW - Lu

KW - Metal-insulator-metal (MIM)

KW - Ni

KW - Reliability

KW - TaN

UR - https://www.scopus.com/pages/publications/80055015762

U2 - 10.1109/LED.2011.2163611

DO - 10.1109/LED.2011.2163611

M3 - 文章

AN - SCOPUS:80055015762

SN - 0741-3106

VL - 32

SP - 1576

EP - 1578

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 5993495

ER -

High-performance Ni₂₃TaN metal-insulator-metal capacitors

Abstract

Keywords

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