High-Performance Normally off p-GaN Gate HEMT with Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design

Hsien Chin Chiu; Yi Sheng Chang; Bo Hong Li; Hsiang Chun Wang; Hsuan Ling Kao; Chih Wei Hu; Rong Xuan

doi:10.1109/JEDS.2018.2789908

High-Performance Normally off p-GaN Gate HEMT with Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

Hsien Chin Chiu^*, Yi Sheng Chang, Bo Hong Li, Hsiang Chun Wang, Hsuan Ling Kao, Chih Wei Hu, Rong Xuan

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

53 Scopus citations

Abstract

In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N barrier layers is proposed. Compared to the standard (STD) p-GaN/AlGaN/GaN HEMT structure, the composite barriers (CB) with AlN etch-stop layer can effectively improve the uniformity of the device threshold voltage (V_TH) and reduce the leakage current. The CB p-GaN gate HEMT achieved a V_TH of 1.7 ± 0.06 V; this value was 2.1 ± 0.2 V for STD HEMT. In addition, the off-state drain leakage current was suppressed one order of magnitude by adopting a composite barrier design.

Original language	English
Article number	8247185
Pages (from-to)	201-206
Number of pages	6
Journal	IEEE Journal of the Electron Devices Society
Volume	6
Issue number	1
DOIs	https://doi.org/10.1109/JEDS.2018.2789908
State	Published - 04 01 2018

Bibliographical note

Publisher Copyright:
© 2013 IEEE.

Keywords

Gallium nitride (GaN)
high electron mobility transistor (HEMT)
normally-off
pulse measurement

Access to Document

10.1109/JEDS.2018.2789908

Cite this

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title = "High-Performance Normally off p-GaN Gate HEMT with Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design",

abstract = "In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed. Compared to the standard (STD) p-GaN/AlGaN/GaN HEMT structure, the composite barriers (CB) with AlN etch-stop layer can effectively improve the uniformity of the device threshold voltage (VTH) and reduce the leakage current. The CB p-GaN gate HEMT achieved a VTH of 1.7 ± 0.06 V; this value was 2.1 ± 0.2 V for STD HEMT. In addition, the off-state drain leakage current was suppressed one order of magnitude by adopting a composite barrier design.",

keywords = "Gallium nitride (GaN), high electron mobility transistor (HEMT), normally-off, pulse measurement",

author = "Chiu, \{Hsien Chin\} and Chang, \{Yi Sheng\} and Li, \{Bo Hong\} and Wang, \{Hsiang Chun\} and Kao, \{Hsuan Ling\} and Hu, \{Chih Wei\} and Rong Xuan",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2018",

month = jan,

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doi = "10.1109/JEDS.2018.2789908",

language = "英语",

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T1 - High-Performance Normally off p-GaN Gate HEMT with Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design

AU - Chiu, Hsien Chin

AU - Chang, Yi Sheng

AU - Li, Bo Hong

AU - Wang, Hsiang Chun

AU - Kao, Hsuan Ling

AU - Hu, Chih Wei

AU - Xuan, Rong

PY - 2018/1/4

Y1 - 2018/1/4

N2 - In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed. Compared to the standard (STD) p-GaN/AlGaN/GaN HEMT structure, the composite barriers (CB) with AlN etch-stop layer can effectively improve the uniformity of the device threshold voltage (VTH) and reduce the leakage current. The CB p-GaN gate HEMT achieved a VTH of 1.7 ± 0.06 V; this value was 2.1 ± 0.2 V for STD HEMT. In addition, the off-state drain leakage current was suppressed one order of magnitude by adopting a composite barrier design.

AB - In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed. Compared to the standard (STD) p-GaN/AlGaN/GaN HEMT structure, the composite barriers (CB) with AlN etch-stop layer can effectively improve the uniformity of the device threshold voltage (VTH) and reduce the leakage current. The CB p-GaN gate HEMT achieved a VTH of 1.7 ± 0.06 V; this value was 2.1 ± 0.2 V for STD HEMT. In addition, the off-state drain leakage current was suppressed one order of magnitude by adopting a composite barrier design.

KW - Gallium nitride (GaN)

KW - high electron mobility transistor (HEMT)

KW - normally-off

KW - pulse measurement

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JO - IEEE Journal of the Electron Devices Society

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