High-performance poly-silicon TFTs using a high-κ PrTiO₃ gate dielectric

In this letter, a polycrystalline-silicon thin-film transistor (poly-Si TFT) with a high- κ PrTiO₃ gate dielectric is proposed for the first time. Compared to TFTs with a Pr₂O₃ gate dielectric, the electrical characteristics of poly-Si TFTs with a PrTiO₃ gate dielectric can be significantly improved, such as lower threshold voltage, smaller subthreshold swing, higher I_on/I_off current ratio, and larger field-effect mobility, even without any hydrogenation treatment. These improvements can be attributed to the high gate capacitance density and low grain-boundary trap state. All of these results suggest that the poly-Si TFT with a high- κ PrTiO₃ gate dielectric is a good candidate for high-speed and low-power display driving circuit applications in flat-panel displays.