Abstract
TaN/SrTiO3/TaN capacitors with a capacitance density of 28-35 fF/μm2 have been developed by using a high-κ (κ = 147-169) SrTiO3 dielectric containing nanometer-sized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N+ treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V2) voltage coefficient of the capacitance and the 3 × 10-8 A/cm2 leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.
Original language | English |
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Pages (from-to) | 2312-2318 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 53 |
Issue number | 9 |
DOIs | |
State | Published - 09 2006 |
Keywords
- Capacitor
- International technology roadmap for semiconductors (ITRS)
- Metal-insulator-metal (MIM)
- SrTiO (STO)