High-performance SrTiO3 MIM capacitors for analog applications

K. C. Chiang; Ching Chien Huang; G. L. Chen; Wen Jauh Chen; H. L. Kao; Yung Hsien Wu; Albert Chin; Sean P. McAlister

doi:10.1109/TED.2006.881013

High-performance SrTiO₃ MIM capacitors for analog applications

K. C. Chiang^*, Ching Chien Huang, G. L. Chen, Wen Jauh Chen, H. L. Kao, Yung Hsien Wu, Albert Chin, Sean P. McAlister

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

93 Scopus citations

Abstract

TaN/SrTiO₃/TaN capacitors with a capacitance density of 28-35 fF/μm² have been developed by using a high-κ (κ = 147-169) SrTiO₃ dielectric containing nanometer-sized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N⁺ treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V²) voltage coefficient of the capacitance and the 3 × 10^-8 A/cm² leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.

Original language	English
Pages (from-to)	2312-2318
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	9
DOIs	https://doi.org/10.1109/TED.2006.881013
State	Published - 09 2006

Keywords

Capacitor
International technology roadmap for semiconductors (ITRS)
Metal-insulator-metal (MIM)
SrTiO (STO)

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10.1109/TED.2006.881013

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title = "High-performance SrTiO3 MIM capacitors for analog applications",

abstract = "TaN/SrTiO3/TaN capacitors with a capacitance density of 28-35 fF/μm2 have been developed by using a high-κ (κ = 147-169) SrTiO3 dielectric containing nanometer-sized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N+ treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V2) voltage coefficient of the capacitance and the 3 × 10-8 A/cm2 leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.",

keywords = "Capacitor, International technology roadmap for semiconductors (ITRS), Metal-insulator-metal (MIM), SrTiO (STO)",

author = "Chiang, \{K. C.\} and Huang, \{Ching Chien\} and Chen, \{G. L.\} and Chen, \{Wen Jauh\} and Kao, \{H. L.\} and Wu, \{Yung Hsien\} and Albert Chin and McAlister, \{Sean P.\}",

year = "2006",

month = sep,

doi = "10.1109/TED.2006.881013",

language = "英语",

volume = "53",

pages = "2312--2318",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

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TY - JOUR

T1 - High-performance SrTiO3 MIM capacitors for analog applications

AU - Chiang, K. C.

AU - Huang, Ching Chien

AU - Chen, G. L.

AU - Chen, Wen Jauh

AU - Kao, H. L.

AU - Wu, Yung Hsien

AU - Chin, Albert

AU - McAlister, Sean P.

PY - 2006/9

Y1 - 2006/9

N2 - TaN/SrTiO3/TaN capacitors with a capacitance density of 28-35 fF/μm2 have been developed by using a high-κ (κ = 147-169) SrTiO3 dielectric containing nanometer-sized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N+ treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V2) voltage coefficient of the capacitance and the 3 × 10-8 A/cm2 leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.

AB - TaN/SrTiO3/TaN capacitors with a capacitance density of 28-35 fF/μm2 have been developed by using a high-κ (κ = 147-169) SrTiO3 dielectric containing nanometer-sized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N+ treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V2) voltage coefficient of the capacitance and the 3 × 10-8 A/cm2 leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.

KW - Capacitor

KW - International technology roadmap for semiconductors (ITRS)

KW - Metal-insulator-metal (MIM)

KW - SrTiO (STO)

UR - https://www.scopus.com/pages/publications/33846009621

U2 - 10.1109/TED.2006.881013

DO - 10.1109/TED.2006.881013

M3 - 文章

AN - SCOPUS:33846009621

SN - 0018-9383

VL - 53

SP - 2312

EP - 2318

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -

High-performance SrTiO₃ MIM capacitors for analog applications

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Keywords

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