High performance V-band gaas low noise amplifier with modified coplanar waveg- uide EBG transmission lines technology

P. Y. Ke; F. H. Huang; H. C. Chiu

doi:10.2528/PIERC12042911

High performance V-band gaas low noise amplifier with modified coplanar waveg- uide EBG transmission lines technology

P. Y. Ke, F. H. Huang, H. C. Chiu

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

This paper presents an integrated millimeter-wave (mmW) low noise amplifier (LNA) which is implemented by using 0.15-μm baseline GaAs pHEMT technology. The design utilized mod- ified co-planar waveguide (CPW) to perform a slow wave transmission line (TLine) with electromagnetic band gap (EBG) ground structures for the input/output matching networks. The low noise V-band LNA chip size was hence reduced by adopting the new EBG transmission lines. The developed amplifier exhibited a noise figure of 6.21 dB, and a peak gain of 17.3 dB at 66 GHz. Additionally, the amplifier has linear characteristics and its measured third-order intercept (IIP3) point is greater than -0:5dBm under a dc power consumption of 75mW.

Original language	English
Pages (from-to)	41-52
Number of pages	12
Journal	Progress In Electromagnetics Research C
Volume	31
DOIs	https://doi.org/10.2528/PIERC12042911
State	Published - 2012

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title = "High performance V-band gaas low noise amplifier with modified coplanar waveg- uide EBG transmission lines technology",

abstract = "This paper presents an integrated millimeter-wave (mmW) low noise amplifier (LNA) which is implemented by using 0.15-μm baseline GaAs pHEMT technology. The design utilized mod- ified co-planar waveguide (CPW) to perform a slow wave transmission line (TLine) with electromagnetic band gap (EBG) ground structures for the input/output matching networks. The low noise V-band LNA chip size was hence reduced by adopting the new EBG transmission lines. The developed amplifier exhibited a noise figure of 6.21 dB, and a peak gain of 17.3 dB at 66 GHz. Additionally, the amplifier has linear characteristics and its measured third-order intercept (IIP3) point is greater than -0:5dBm under a dc power consumption of 75mW.",

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year = "2012",

doi = "10.2528/PIERC12042911",

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pages = "41--52",

journal = "Progress In Electromagnetics Research C",

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AU - Ke, P. Y.

AU - Huang, F. H.

AU - Chiu, H. C.

PY - 2012

Y1 - 2012

N2 - This paper presents an integrated millimeter-wave (mmW) low noise amplifier (LNA) which is implemented by using 0.15-μm baseline GaAs pHEMT technology. The design utilized mod- ified co-planar waveguide (CPW) to perform a slow wave transmission line (TLine) with electromagnetic band gap (EBG) ground structures for the input/output matching networks. The low noise V-band LNA chip size was hence reduced by adopting the new EBG transmission lines. The developed amplifier exhibited a noise figure of 6.21 dB, and a peak gain of 17.3 dB at 66 GHz. Additionally, the amplifier has linear characteristics and its measured third-order intercept (IIP3) point is greater than -0:5dBm under a dc power consumption of 75mW.

AB - This paper presents an integrated millimeter-wave (mmW) low noise amplifier (LNA) which is implemented by using 0.15-μm baseline GaAs pHEMT technology. The design utilized mod- ified co-planar waveguide (CPW) to perform a slow wave transmission line (TLine) with electromagnetic band gap (EBG) ground structures for the input/output matching networks. The low noise V-band LNA chip size was hence reduced by adopting the new EBG transmission lines. The developed amplifier exhibited a noise figure of 6.21 dB, and a peak gain of 17.3 dB at 66 GHz. Additionally, the amplifier has linear characteristics and its measured third-order intercept (IIP3) point is greater than -0:5dBm under a dc power consumption of 75mW.

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DO - 10.2528/PIERC12042911

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SN - 1937-8718

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SP - 41

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JO - Progress In Electromagnetics Research C

JF - Progress In Electromagnetics Research C

ER -

High performance V-band gaas low noise amplifier with modified coplanar waveg- uide EBG transmission lines technology

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