High photocurrent and high frequency response of light-addressable potentiometrie sensor with thin Si substrate and surface roughness

Wei Yin Zeng; Cong Cheng Chen; Chia Ming Yang; Chao Sung Lai

doi:10.1109/ICSENS.2015.7370177

High photocurrent and high frequency response of light-addressable potentiometrie sensor with thin Si substrate and surface roughness

Wei Yin Zeng
, Cong Cheng Chen
, Chia Ming Yang
, Chao Sung Lai

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

For two dimensional (2D) chemical images by light-addressable potentiometric sensor (LAPS), high photocurrent obtained in high ac frequency is the most critical criterion to have an acceptable signal-to-noise ratio in a very short time for a pixel. A simple KOH etch can be used to decrease the thickness of silicon substrate for high photocurrent. In the meantime, higher surface roughness in both sides could be achieved by etching flat surface, which is also benefit for high photocurrent and pH sensitivity for rough back and front side, respectively. With this 175μm-thick Si substrate, operating at 20 kHz could be used to collect 2D chemical images easily.

Original language	English
Title of host publication	2015 IEEE SENSORS - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479982028
DOIs	https://doi.org/10.1109/ICSENS.2015.7370177
State	Published - 31 12 2015
Event	14th IEEE SENSORS - Busan, Korea, Republic of Duration: 01 11 2015 → 04 11 2015

Publication series

Name	2015 IEEE SENSORS - Proceedings

Conference

Conference	14th IEEE SENSORS
Country/Territory	Korea, Republic of
City	Busan
Period	01/11/15 → 04/11/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

LAPS
frequency
photocurrent
thin Si substrate

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10.1109/ICSENS.2015.7370177

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Zeng, W. Y., Chen, C. C., Yang, C. M., & Lai, C. S. (2015). High photocurrent and high frequency response of light-addressable potentiometrie sensor with thin Si substrate and surface roughness. In 2015 IEEE SENSORS - Proceedings Article 7370177 (2015 IEEE SENSORS - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSENS.2015.7370177

@inproceedings{d9b85f8149ab4bd293f5ba728dfca822,

title = "High photocurrent and high frequency response of light-addressable potentiometrie sensor with thin Si substrate and surface roughness",

abstract = "For two dimensional (2D) chemical images by light-addressable potentiometric sensor (LAPS), high photocurrent obtained in high ac frequency is the most critical criterion to have an acceptable signal-to-noise ratio in a very short time for a pixel. A simple KOH etch can be used to decrease the thickness of silicon substrate for high photocurrent. In the meantime, higher surface roughness in both sides could be achieved by etching flat surface, which is also benefit for high photocurrent and pH sensitivity for rough back and front side, respectively. With this 175μm-thick Si substrate, operating at 20 kHz could be used to collect 2D chemical images easily.",

keywords = "LAPS, frequency, photocurrent, thin Si substrate",

author = "Zeng, \{Wei Yin\} and Chen, \{Cong Cheng\} and Yang, \{Chia Ming\} and Lai, \{Chao Sung\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 14th IEEE SENSORS ; Conference date: 01-11-2015 Through 04-11-2015",

year = "2015",

month = dec,

day = "31",

doi = "10.1109/ICSENS.2015.7370177",

language = "英语",

series = "2015 IEEE SENSORS - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Zeng, WY, Chen, CC, Yang, CM & Lai, CS 2015, High photocurrent and high frequency response of light-addressable potentiometrie sensor with thin Si substrate and surface roughness. in 2015 IEEE SENSORS - Proceedings., 7370177, 2015 IEEE SENSORS - Proceedings, Institute of Electrical and Electronics Engineers Inc., 14th IEEE SENSORS, Busan, Korea, Republic of, 01/11/15. https://doi.org/10.1109/ICSENS.2015.7370177

High photocurrent and high frequency response of light-addressable potentiometrie sensor with thin Si substrate and surface roughness. / Zeng, Wei Yin; Chen, Cong Cheng; Yang, Chia Ming et al.
2015 IEEE SENSORS - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. 7370177 (2015 IEEE SENSORS - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High photocurrent and high frequency response of light-addressable potentiometrie sensor with thin Si substrate and surface roughness

AU - Zeng, Wei Yin

AU - Chen, Cong Cheng

AU - Yang, Chia Ming

AU - Lai, Chao Sung

PY - 2015/12/31

Y1 - 2015/12/31

N2 - For two dimensional (2D) chemical images by light-addressable potentiometric sensor (LAPS), high photocurrent obtained in high ac frequency is the most critical criterion to have an acceptable signal-to-noise ratio in a very short time for a pixel. A simple KOH etch can be used to decrease the thickness of silicon substrate for high photocurrent. In the meantime, higher surface roughness in both sides could be achieved by etching flat surface, which is also benefit for high photocurrent and pH sensitivity for rough back and front side, respectively. With this 175μm-thick Si substrate, operating at 20 kHz could be used to collect 2D chemical images easily.

AB - For two dimensional (2D) chemical images by light-addressable potentiometric sensor (LAPS), high photocurrent obtained in high ac frequency is the most critical criterion to have an acceptable signal-to-noise ratio in a very short time for a pixel. A simple KOH etch can be used to decrease the thickness of silicon substrate for high photocurrent. In the meantime, higher surface roughness in both sides could be achieved by etching flat surface, which is also benefit for high photocurrent and pH sensitivity for rough back and front side, respectively. With this 175μm-thick Si substrate, operating at 20 kHz could be used to collect 2D chemical images easily.

KW - LAPS

KW - frequency

KW - photocurrent

KW - thin Si substrate

UR - https://www.scopus.com/pages/publications/84963631009

U2 - 10.1109/ICSENS.2015.7370177

DO - 10.1109/ICSENS.2015.7370177

M3 - 会议稿件

AN - SCOPUS:84963631009

T3 - 2015 IEEE SENSORS - Proceedings

BT - 2015 IEEE SENSORS - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 14th IEEE SENSORS

Y2 - 1 November 2015 through 4 November 2015

ER -

High photocurrent and high frequency response of light-addressable potentiometrie sensor with thin Si substrate and surface roughness

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