@inproceedings{c5f44d867d2f438cacd9b1c9059e2f41,
title = "High power density and large voltage swing of enhancement-mode Al0.5Ga0.5As/InGaAs pHEMTs for 3.5 V L-band applications",
abstract = "A high power density and a large voltage swing of Al0.5Ga0.5As/InGaAs enhancement-mode pHEMTs operated under Vds = 3.5 V for L-band application has been developed. In the study, we improve the current density and the gate voltage operation region of the device by increasing the Al mole fraction of AlxGa1-xAs to x = 0.5. The developed 1.0 μm long and 1mm width gate FETs exhibit a Vth = +0.24 V and an Imax of 286 mA/mm. The maximum output power at a 1.9 GHz operation, is 95 mW/mm, with a linear power gain of 18.7 dB, and a power-added efficiency of 60%. These characteristics demonstrate a great potential for E-pHEMTs on the high power microwave device applications.",
author = "Chiu, {Hsien Chin} and Yang, {Shih Cheng} and Chan, {Yi Jen}",
year = "2001",
language = "英语",
isbn = "0780371380",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1203--1206",
booktitle = "Asia-Pacific Microwave Conference Proceedings, APMC",
address = "美国",
note = "2001 Asia-Pacific Microwave Conference ; Conference date: 03-12-2001 Through 06-12-2001",
}