High power density of AlGaAs/InGaAs doped-channel FETs with low DC power supply

H. C. Chiu; S. C. Yang; F. T. Chien; Y. J. Chan

doi:10.1049/el:20010399

High power density of AlGaAs/InGaAs doped-channel FETs with low DC power supply

H. C. Chiu^*, S. C. Yang, F. T. Chien, Y. J. Chan

^*Corresponding author for this work

National Central University

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

High power density Al_0.3Ga_0.7AS/In_0.15Ga_0.85As doped-channel FETs (modified DCFETs) biased at 3V for 2.4GHz wireless communication applications are proposed. A planar Si δ-doped layer is inserted inside the wide-bandgap undoped AlGaAs layer to reduce parasitic resistances and enhance the device microwave power performance. The modified DCFETs (M-DCFETs) exhibit an output power density of 302mW/mm, a power-added efficiency of 52%, and a linear power gain of 19dB under 2.4GHz operation for a 1 mm gate-width device. These characteristics suggest that doped-channel FETs with a planar Si δ-doped layer can be used in high linearity and high power microwave device applications.

Original language	English
Pages (from-to)	597-598
Number of pages	2
Journal	Electronics Letters
Volume	37
Issue number	9
DOIs	https://doi.org/10.1049/el:20010399
State	Published - 26 04 2001
Externally published	Yes

Access to Document

10.1049/el:20010399

Cite this

@article{d42f681cfdce45499635f89860921ca0,

title = "High power density of AlGaAs/InGaAs doped-channel FETs with low DC power supply",

abstract = "High power density Al0.3Ga0.7AS/In0.15Ga0.85As doped-channel FETs (modified DCFETs) biased at 3V for 2.4GHz wireless communication applications are proposed. A planar Si δ-doped layer is inserted inside the wide-bandgap undoped AlGaAs layer to reduce parasitic resistances and enhance the device microwave power performance. The modified DCFETs (M-DCFETs) exhibit an output power density of 302mW/mm, a power-added efficiency of 52%, and a linear power gain of 19dB under 2.4GHz operation for a 1 mm gate-width device. These characteristics suggest that doped-channel FETs with a planar Si δ-doped layer can be used in high linearity and high power microwave device applications.",

author = "Chiu, {H. C.} and Yang, {S. C.} and Chien, {F. T.} and Chan, {Y. J.}",

year = "2001",

month = apr,

day = "26",

doi = "10.1049/el:20010399",

language = "英语",

volume = "37",

pages = "597--598",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "9",

}

TY - JOUR

T1 - High power density of AlGaAs/InGaAs doped-channel FETs with low DC power supply

AU - Chiu, H. C.

AU - Yang, S. C.

AU - Chien, F. T.

AU - Chan, Y. J.

PY - 2001/4/26

Y1 - 2001/4/26

N2 - High power density Al0.3Ga0.7AS/In0.15Ga0.85As doped-channel FETs (modified DCFETs) biased at 3V for 2.4GHz wireless communication applications are proposed. A planar Si δ-doped layer is inserted inside the wide-bandgap undoped AlGaAs layer to reduce parasitic resistances and enhance the device microwave power performance. The modified DCFETs (M-DCFETs) exhibit an output power density of 302mW/mm, a power-added efficiency of 52%, and a linear power gain of 19dB under 2.4GHz operation for a 1 mm gate-width device. These characteristics suggest that doped-channel FETs with a planar Si δ-doped layer can be used in high linearity and high power microwave device applications.

AB - High power density Al0.3Ga0.7AS/In0.15Ga0.85As doped-channel FETs (modified DCFETs) biased at 3V for 2.4GHz wireless communication applications are proposed. A planar Si δ-doped layer is inserted inside the wide-bandgap undoped AlGaAs layer to reduce parasitic resistances and enhance the device microwave power performance. The modified DCFETs (M-DCFETs) exhibit an output power density of 302mW/mm, a power-added efficiency of 52%, and a linear power gain of 19dB under 2.4GHz operation for a 1 mm gate-width device. These characteristics suggest that doped-channel FETs with a planar Si δ-doped layer can be used in high linearity and high power microwave device applications.

UR - http://www.scopus.com/inward/record.url?scp=0035953669&partnerID=8YFLogxK

U2 - 10.1049/el:20010399

DO - 10.1049/el:20010399

M3 - 文章

AN - SCOPUS:0035953669

SN - 0013-5194

VL - 37

SP - 597

EP - 598

JO - Electronics Letters

JF - Electronics Letters

IS - 9

ER -

High power density of AlGaAs/InGaAs doped-channel FETs with low DC power supply

Abstract

Access to Document

Other files and links

Fingerprint

Cite this