@inproceedings{66fcdaf19b2b4f569a2ca187e0db59be,
title = "High quality indium nitride films grown on GZO/si substrate",
abstract = "Highly-quality InN films were prepared on Si (100) substrates using radio frequency plasma-assist metal-organic molecular beam epitaxy (RF-MOMBE) system. Ga-doped ZnO (GZO) films were used buffer layer for InN films growth. The InN films has been characterized in detail using X-ray diffraction (XRD), High resolution transmission electron microscopy (TEM), and photoluminescence (PL) measurements. XRD pattern shows InN films has wurtzite structure with preferential (0002) orientation. TEM images exhibit the InN/GZO were growth by two-dimensional mode and thickness about 1 μm. Specially, InN was high growth rate ∼ 33 nm/min disposition on substrates by our system. Optical characterization by photoluminescence confirms that the band gap of polycrystalline wurtzite InN is 0.79 ± 0.05 eV. The polarity dependence of the film crystalline is discussed in terms of the reactivity at the InN/GZO interface. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.",
keywords = "GZO, InN, RF-MOMBE",
author = "Chen, {Wei Chun} and Kuo, {Shou Yi} and Hsiao, {Chien Nan}",
year = "2011",
doi = "10.1109/INEC.2011.5991727",
language = "英语",
isbn = "9781457703799",
series = "Proceedings - International NanoElectronics Conference, INEC",
booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",
note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",
}